CAJ | 학술논문

SiC金属-半导体场效应晶体管的工艺研制中,通常需要有源区之间的隔离.现常用刻蚀隔离的方法,但这一方法存在细栅条跨越隔离台阶的问题,若隔离台阶太陡,则栅金属在台阶处连续性较差,易产生电迁徙,器件工作时首先在此处烧毁,使器件失效.设计了几种提高栅金属平坦性的方法:通过优化台上掩模层台阶倾斜角以及调整刻蚀ICP,RIE功率可以实现180左右倾斜台阶;通过"类平坦化"技术可以将绝缘介质淀积到台下区,基本实现无台阶;利用"离子注入隔离"取代"刻蚀隔离"则可以真正实现无台阶.实验验证以上方法可以有效提高栅金属的平坦性.
SiC금속-반도체장효응정체관적공예연제중,통상수요유원구지간적격리.현상용각식격리적방법,단저일방법존재세책조과월격리태계적문제,약격리태계태두,칙책금속재태계처련속성교차,역산생전천사,기건공작시수선재차처소훼,사기건실효.설계료궤충제고책금속평탄성적방법:통과우화태상엄모층태계경사각이급조정각식ICP,RIE공솔가이실현180좌우경사태계;통과"류평탄화"기술가이장절연개질정적도태하구,기본실현무태계;이용"리자주입격리"취대"각식격리"칙가이진정실현무태계.실험험증이상방법가이유효제고책금속적평탄성.
Isolation mesa was always used in the manufacture of SiC MESFET. The abrupt steps will lead bad continuance of gate metal, even electromigration. All of those can lead failure of the device. Three methods of improving gate metal flatness for SiC MESFET were presented, and an around 18° tilt stage can be achieved by optimizing etching step angle of the platform mask layer and adjusting the ICP, RIE power. The isoplanar technology with SiO_2 was used to minimized the mesa. The ion implantation isolation are used instead of etching isolation, so it can truly realize non-step. The experiments verifies that those methods can improve the gate metal flatness for SiC MESFET.