CAJ | 학술논문

提出一种超声振动辅助化学机械复合抛光硅片边缘新技术,建立了抛光工具设计、性能检测及复合抛光实验系统,并进行了不同超声振动形式传统化学机械以及抛光工具对硅片边缘抛光的实验研究.结果表明,在相同抛光条件下,抛光工具超声椭圆振动对抛光效果的改善作用最佳.抛光工具加入超声椭圆运动后,工件表面粗糙度值Ra由传统抛光法的0.059 μm降低到0.043 μm,材料去除量增加22%,且抛光表面形貌有明显改善.
제출일충초성진동보조화학궤계복합포광규편변연신기술,건립료포광공구설계、성능검측급복합포광실험계통,병진행료불동초성진동형식전통화학궤계이급포광공구대규편변연포광적실험연구.결과표명,재상동포광조건하,포광공구초성타원진동대포광효과적개선작용최가.포광공구가입초성타원운동후,공건표면조조도치Ra유전통포광법적0.059 μm강저도0.043 μm,재료거제량증가22%,차포광표면형모유명현개선.
A newly hybrid technique for silicon wafer edge polishing of ultrasonic-vibration and chemical mechanical was presented, and the design, performance testing for the polishing tools, were discussed along with establishment of experimental system for the hybrid polishing. And then, the traditional chemical mechanical polishing, as well as the polishing tool with different forms of ultrasonic-vibration was investigated on polish for the edge of silicon wafer. Experimental results showed that in the same polishing condition, the hybrid polishing of ultrasonic-elliptic-vibration and chemical mechanical has a favorable effect to improve wafer edge polishing. As ultrasonic-elliptic-vibration is put in polishing tool, the roughness Ra of silicon wafer polished surface decreases from the traditional polishing method of 0.059 μm down to the 0.043μm, material removal increase by 22%, and the polished surface morphology is significantly improved.