CAJ | 학술논문

研究了使用聚焦离子束(FIB)方法制备低k介质的TEM样品时离子束参数对介质微观形貌的影响,发现低k介质的微观形貌与离子束参数具有较强的相关性.传统大离子束流、高加速电压的FIB参数将导致低.k介质多孔性增加、致密度下降;且k值越低,离子束参数影响越大.对于亚65 nm工艺中使用的k值为2.7的介质,当离子束流减小到50 pA、加速电压降低到5 kV时,FIB制样方法对介质致密度的影响基本可忽略,样品微观形貌得到了显著改善;而对于65 nm工艺中使用的k值为3.0的介质,其微观形貌受离子束参数的影响则相对较小.
연구료사용취초리자속(FIB)방법제비저k개질적TEM양품시리자속삼수대개질미관형모적영향,발현저k개질적미관형모여리자속삼수구유교강적상관성.전통대리자속류、고가속전압적FIB삼수장도치저.k개질다공성증가、치밀도하강;차k치월저,리자속삼수영향월대.대우아65 nm공예중사용적k치위2.7적개질,당리자속류감소도50 pA、가속전압강저도5 kV시,FIB제양방법대개질치밀도적영향기본가홀략,양품미관형모득도료현저개선;이대우65 nm공예중사용적k치위3.0적개질,기미관형모수리자속삼수적영향칙상대교소.
Impact of FIB parameters on low-k dielectric TEM sample preparation was investigated. It is found that the micro-morphology of low-k dielectric is greatly impacted by different milling conditions of ion beam. The porosity of low-k dielectric is enhanced by the conventional FIB sample preparation method at high accelerating voltage and large milling current. The lower k value, the more porous profile are enhanced by FIB. The conditions of FIB sample preparation for low-k dielectric of 2.7 are optimized in 65 nm and sub-65 nm technologies based on this work. The optimized ion beam current and accelerating voltage are 50 pA and 5 kV, respectively. As for k value of 3.0, its micro topography is effected relatively small by FIB parameters.