半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2007年
12期
1895-1901
,共7页
表面声子极化激元%三元混晶%半导体膜
錶麵聲子極化激元%三元混晶%半導體膜
표면성자겁화격원%삼원혼정%반도체막
surface phonon-polaritons%ternary mixed crystals%slab of semiconductor
采用改进的无规元素孤立位移模型和波恩-黄近似,运用电磁场的麦克斯韦方程和边界条件,研究极性三元混晶膜中的表面声子极化激元.以AlxGa1-xAs,ZnxCd1-xS 和GaxIn1-xN 膜为例,获得了其中表面声子极化激元的频率作为波矢和膜厚之函数的数值结果并进行了讨论.结果表明:在三元混晶膜中有四支表面声子极化激元,不同材料的色散曲线分别显示了混晶电磁声子模的"双模"和"单模"特征.
採用改進的無規元素孤立位移模型和波恩-黃近似,運用電磁場的麥剋斯韋方程和邊界條件,研究極性三元混晶膜中的錶麵聲子極化激元.以AlxGa1-xAs,ZnxCd1-xS 和GaxIn1-xN 膜為例,穫得瞭其中錶麵聲子極化激元的頻率作為波矢和膜厚之函數的數值結果併進行瞭討論.結果錶明:在三元混晶膜中有四支錶麵聲子極化激元,不同材料的色散麯線分彆顯示瞭混晶電磁聲子模的"雙模"和"單模"特徵.
채용개진적무규원소고립위이모형화파은-황근사,운용전자장적맥극사위방정화변계조건,연구겁성삼원혼정막중적표면성자겁화격원.이AlxGa1-xAs,ZnxCd1-xS 화GaxIn1-xN 막위례,획득료기중표면성자겁화격원적빈솔작위파시화막후지함수적수치결과병진행료토론.결과표명:재삼원혼정막중유사지표면성자겁화격원,불동재료적색산곡선분별현시료혼정전자성자모적"쌍모"화"단모"특정.
Surface phonon-polaritons in slabs of polar ternary mixed crystals are investigated with the modified random-element-isodisplacement model and the Born-Huang approximation,based on Maxwell's equations with the usual boundary conditions.The numerical results of the surface phonon-polariton frequencies as functions of the wave-vector and thickness for slabs of ternary mixed crystals AlxGa1-xAs,ZnxCd1-xS,and GaxIn1-xN are obtained and discussed.It is shown that there are four branches of surface phonon-polaritons in slab systems.The "two-mode" and "one-mode" behaviors of surface phonon-polaritons are also shown in their dispersion curves.