CAJ | 학술논문

SOI-CMOS电路具有高速度、低功耗、抗辐照等优点。用氧、氮离子注入硅中，得到性能良好的SIMOX和SIMNI薄膜材料。用扩展电阻、霍耳效应和深能级瞬态谱等多种方法研究了SOI材料表面界面的电学性能。并对各种方法进行了讨论。结果显示，用分步注入和分步退火制备的SOI材料大大地改善了材料的电学性能。
SOI-CMOS전로구유고속도、저공모、항복조등우점。용양、담리자주입규중，득도성능량호적SIMOX화SIMNI박막재료。용확전전조、곽이효응화심능급순태보등다충방법연구료SOI재료표면계면적전 학성능。병대각충방법진행료토론。결과현시，용분보주입화분보퇴화제비적SOI재료대대지개선료재료적전학성능。
The SOI (silicon-on-insulator) technology was regarded as a very important technique of the silicon-integrated ci rcuit in the 21 century. The SIMOX (separation by implanted oxygen) and SI MNI (separation by implanted nitrogen) films were formed by Oor Nion implantation into silicon with several methods. The SR (spreading resista nce), Hall effets and DLTS (deep-level transient spectroscopy) measurements were used to analyse the surface electrical properties of the SOI structures. The results show that the step-implanted SOI films have good electrical properties.