量子光学学报
量子光學學報
양자광학학보
ACTA SINICA QUANTUM OPTICA
2003年
1期
1-6
,共6页
光学%电光效应%半抛物量子阱%紧致密度矩阵近似
光學%電光效應%半拋物量子阱%緊緻密度矩陣近似
광학%전광효응%반포물양자정%긴치밀도구진근사
optics%Electro-optic effects%Semi-parabolic quantum well%density matrix approach
利用量子力学中的紧致密度矩阵方法,研究了施加电场的半抛物量子阱中的电光效应.通过位移谐振子变换,得到了系统中的电子态的精确解.对典型的GaAs材料进行数值计算的结果表明,随着电场强度的增加,电光效应系数几乎线性随之增加;但是随着半抛物量子阱受限势频率的增加,电光效应系数单调地减小;而且在同样的电场强度及抛物束缚势频率作用下,半抛物量子阱模型中的电光效应系数比抛物量子阱模型中的值大两个数量级,这是由于我们所选模型本身的非对称性以及电场进一步使这种非对称性增强的缘故.
利用量子力學中的緊緻密度矩陣方法,研究瞭施加電場的半拋物量子阱中的電光效應.通過位移諧振子變換,得到瞭繫統中的電子態的精確解.對典型的GaAs材料進行數值計算的結果錶明,隨著電場彊度的增加,電光效應繫數幾乎線性隨之增加;但是隨著半拋物量子阱受限勢頻率的增加,電光效應繫數單調地減小;而且在同樣的電場彊度及拋物束縳勢頻率作用下,半拋物量子阱模型中的電光效應繫數比拋物量子阱模型中的值大兩箇數量級,這是由于我們所選模型本身的非對稱性以及電場進一步使這種非對稱性增彊的緣故.
이용양자역학중적긴치밀도구진방법,연구료시가전장적반포물양자정중적전광효응.통과위이해진자변환,득도료계통중적전자태적정학해.대전형적GaAs재료진행수치계산적결과표명,수착전장강도적증가,전광효응계수궤호선성수지증가;단시수착반포물양자정수한세빈솔적증가,전광효응계수단조지감소;이차재동양적전장강도급포물속박세빈솔작용하,반포물양자정모형중적전광효응계수비포물양자정모형중적치대량개수량급,저시유우아문소선모형본신적비대칭성이급전장진일보사저충비대칭성증강적연고.
By using the compact density matrix approach, the electro-optic effect (EOE) in a semi-parabolic quantum well (QW) with an applied electric field has been theoretically investigated. Via variant of displacement harmonic oscillation, the exact electronic states in the semi-parabolic QW with an applied electric field are obtained. Numerical results on typical GaAs material reveal that electro-optic effect nearly linearly increases with the increasing of magnitude of the electric field, but it monotonously decreases with the increasing of confined potential frequency of the semi-parabolic QW. The EOE in our model is 102 times larger than that in the symmetric parabolic QW under the same electric field and the same frequency of parabolic confined potential, which is due to the self-asymmetry of the system and the electric field effect.