CAJ | 학술논문

报道了采用电子束光刻、反应离子刻蚀及热氧化等工艺,在p型SIMOX(separation by implanted oxygen)硅片上成功制造的一种单电子晶体管.特别是,提供了一种制造量子线和量子点的工艺方法,在器件的电流-电压特性上观测到明显的库仑阻塞效应和单电子隧穿效应.器件的总电容约为9.16aF.在77K工作温度下,也观测到明显的电流-电压振荡特性.
보도료채용전자속광각、반응리자각식급열양화등공예,재p형SIMOX(separation by implanted oxygen)규편상성공제조적일충단전자정체관.특별시,제공료일충제조양자선화양자점적공예방법,재기건적전류-전압특성상관측도명현적고륜조새효응화단전자수천효응.기건적총전용약위9.16aF.재77K공작온도하,야관측도명현적전류-전압진탕특성.
Si-based single electron transistor (SET) is fabricated successfully on p-type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching (RIE) and thermal oxidation.In particular,using thermal oxidation and etching off the oxide layer,a one-dimensional Si quantum wire can be converted into several quantum dots inside quantum wire in connection with the source and drain regions.The differential conductance (dIds/dVds) oscillations and the Coulomb staircases in the source-drain current (Ids) are shown clearly dependent on the source-drain voltage at 5.3K.The Ids-Vgs (gate voltage) oscillations are observed from the Ids-Vgs characteristics as a function of Vgs at different temperatures and various values of Vds.For a SET whose total capacitance is about 9.16aF,the Ids-Vgs oscillations can be observed at 77K.