CAJ | 학술논문

采用改进的坩埚下降法成功生长了硅酸铋Bi12SiO20(BSO) 单晶,探讨了工艺参数对晶体生长的影响. 用电子探针方法研究了硅酸铋晶体中的铂金包裹体及其相关缺陷. 铂金包裹物的尺寸一般在30 μm～5 mm之间. 包裹物经常导致晶体开裂,使成品率大为降低. 铂坩埚中的杂质是导致坩埚受侵蚀的主要原因,通过延长铂坩埚熔炼时间和适当降低晶体生长炉温,可明显减少铂包裹体及其相关缺陷. 通过优化生长工艺,获得了尺寸为50 mm×35 mm×35 mm的优质BSO单晶.
채용개진적감과하강법성공생장료규산필Bi12SiO20(BSO) 단정,탐토료공예삼수대정체생장적영향. 용전자탐침방법연구료규산필정체중적박금포과체급기상관결함. 박금포과물적척촌일반재30 μm～5 mm지간. 포과물경상도치정체개렬,사성품솔대위강저. 박감과중적잡질시도치감과수침식적주요원인,통과연장박감과용련시간화괄당강저정체생장로온,가명현감소박포과체급기상관결함. 통과우화생장공예,획득료척촌위50 mm×35 mm×35 mm적우질BSO단정.
Bismuth silicon oxide Bi12SiO20(BSO) single crystals were grown by the modified vertical Bridgman method. The growth conditions were discussed and the platinum-related defects were investigated by means of Electron Probe Micro Analysis (EPMA). Pt inclusions with a dimension of 30 μm～5 mm were observed in as-grown BSO crystals. The inclusions usually coexisted with cracking, which caused low yield of BSO crystals. The Pt-related inclusions were attributed to the impurities in Pt crucible. Two approaches were employed to reduce Pt-related defects: prolonging melting time during purifying Pt crucible and lowering the furnace temperature during the growth. High quality BSO crystals up to 50 mm×35 mm×35 mm were grown reproducibly.