CAJ | 학술논문

按照实际制作器件的工艺条件和方法,采用不同的Cu引线框架氧化时间,制备了多组无芯片的封装器件,并打磨Cu/EMC界面的样品.然后对样品进行了剪切实验和界面微观结构观察.剪切实验发现,适当的Cu预氧化时间能有效提高Cu/EMC界面强度.Cu/EMC界面的SEM照片显示,150 min的氧化时间使界面产生了大量不同形状的氧化物颗粒,断裂沿Cu氧化层或EMC过渡层发生,导致界面剪切强度离散.考虑到Cu氧化对Cu/EMC界面的影响及工艺成本,氧化时间范围为165℃下8～12 min.
안조실제제작기건적공예조건화방법,채용불동적Cu인선광가양화시간,제비료다조무심편적봉장기건,병타마Cu/EMC계면적양품.연후대양품진행료전절실험화계면미관결구관찰.전절실험발현,괄당적Cu예양화시간능유효제고Cu/EMC계면강도.Cu/EMC계면적SEM조편현시,150 min적양화시간사계면산생료대량불동형상적양화물과립,단렬연Cu양화층혹EMC과도층발생,도치계면전절강도리산.고필도Cu양화대Cu/EMC계면적영향급공예성본,양화시간범위위165℃하8～12 min.
The bare die packages with different oxidation time of Cu lead-frame were fabricated in standard commercial process, and Cu/EMC interfaces were formed by polishing. Shear test and microscale observation on the delaminated interface were carried out. The shear test results indicate that appropriate oxidation time can effectively enhance the shear strength of the Cu/EMC interfaces. Microstructures on the delaminated interfaces with various oxidation times are different. SEM image of Cu/EMC interface with 150 min oxidation shows that there are a lot of oxidation particles with different shapes and sizes, and fracture takes place along oxidation layer or EMC transition layer, which cause the shear strength of the interface to be scattered. Considering the effects of oxidation time on shear strength of Cu/EMC interface and cost, the optimal oxidation time of 8 to 12 min under 165℃ is suggested.