CAJ | 학술논문

本工作通过采用电化学极-化学氧化两步法在1:1氢氟酸和乙醇溶液中制备出孔径约为1～2 μm,厚度大经为6～10 μm的多孔硅样品.首先将0.03 A/cm2的恒电流施加到p(100)硅片一段时间,然后将该硅片浸到20%的硝酸溶液中氧化一段时间.通过此方法获得的多孔硅结构再进一步用扫描电子显微镜和拉曼光谱仪进行表面形貌和光学性质的考察.所有制备出的多孔硅结构均有光致发光现象.老化的多孔硅样品(在干燥器放置一年)的光致发光谱峰强度明显增强,但分别经过苯乙烯和十六碳烯(1)两种有机溶剂处理1 h后的老化多孔硅样品的光致发光强度却没有显著改变.
본공작통과채용전화학겁-화학양화량보법재1:1경불산화을순용액중제비출공경약위1～2 μm,후도대경위6～10 μm적다공규양품.수선장0.03 A/cm2적항전류시가도p(100)규편일단시간,연후장해규편침도20%적초산용액중양화일단시간.통과차방법획득적다공규결구재진일보용소묘전자현미경화랍만광보의진행표면형모화광학성질적고찰.소유제비출적다공규결구균유광치발광현상.노화적다공규양품(재간조기방치일년)적광치발광보봉강도명현증강,단분별경과분을희화십륙탄희(1)량충유궤용제처리1 h후적노화다공규양품적광치발광강도각몰유현저개변.
Porous silicon structures were formed by a two-step technique consisting of electrochemical polarization and chemical oxidation processes in 1∶1 hydrofluoric acid and ethanol solutions. A constant current density of 0.03 A/cm2 was applied to p-type silicon wafers, followed by chemical treatment in 20% nitric acid solutions. These samples were then carefully examined by scanning electron microscope (SEM) and Raman spectrometer to study their surface morphologies and optical properties. After a year storage in a desiccator, the aged porous silicon samples were re-examined by SEM and Raman spectrometer before and after treated with styrene and decene(1) organic solvents, respectively. It was found that the Raman intensities of the aged porous silicon samples were significantly enhanced. However, the treatments of the aged porous silicon samples with tow organic solvents did not alter their optical properties.