CAJ | 학술논문

通过施加直流电压于P型SiOxNy薄膜，使热电子注入到薄膜而引起薄膜电学参数的改变.测试了薄膜在电子注入前后电学参数的变化，以研究薄膜的电子注入特性，探求薄膜的抗电子注入能力与制备工艺之间的关系.结合俄歇电子能谱和红外光谱分析膜的微观结构，对薄膜的电子注入特性进行了理论分析与讨论.
통과시가직류전압우P형SiOxNy박막，사열전자주입도박막이인기박막전학삼수적개변.측시료박막재전자주입전후전학삼수적변화，이연구박막적전자주입특성，탐구박막적항전자주입능력여제비공예지간적관계.결합아헐전자능보화홍외광보분석막적미관결구，대박막적전자주입특성진행료이론분석여토론.
Direct voltage was applied to the P-type substrate SiOxNy film.The hot electrons were injected into the film and resulted in the changes of the electrical characteristic parameters. By testing the electrical characteristic changes before and after the injection, the electron injection characteristics were studied. The relation between the capacities of anti-injection and the fabricated conditions was found.The characteristics of the electron-injected film were analyzed and discussed, in terms of the microstructure analyses in the film with the Auger electron spectroscopy and the infrared spectrum.