CAJ | 학술논문

研究了陶瓷衬底上多晶硅薄膜的生长和区熔再结晶.利用快速热化学气相沉积(RTCVD)方法,在低成本的Al2O3衬底上沉积了重掺杂的致密多晶硅薄膜,薄膜的晶粒尺寸在微米级.经区熔再结晶(ZMR)后,薄膜的晶粒尺寸有了较大的提高,而且迁移率较高,这样的薄膜可以用作晶体硅薄膜太阳电池的籽晶层.最大的晶粒达到毫米量级,空穴迁移率超过50 cm2·V-1·s-1.在籽晶层上外延的活性层形貌与此类似.这些结果显示这种薄膜在光伏应用方面有较大的潜力.
연구료도자츤저상다정규박막적생장화구용재결정.이용쾌속열화학기상침적(RTCVD)방법,재저성본적Al2O3츤저상침적료중참잡적치밀다정규박막,박막적정립척촌재미미급.경구용재결정(ZMR)후,박막적정립척촌유료교대적제고,이차천이솔교고,저양적박막가이용작정체규박막태양전지적자정층.최대적정립체도호미량급,공혈천이솔초과50 cm2·V-1·s-1.재자정층상외연적활성층형모여차유사.저사결과현시저충박막재광복응용방면유교대적잠력.
In this paper, growth and recrystallization of silicon films on ceramic substrates were studied. Heavily doped polycrystalline silicon thin films were deposited on low cost Al2O3 by thermal rapid chemical vapor deposition (RTCVD). Compact and uniform films with grain size in the order of some micrometers were fabricated. By means of zone melting recrystallization (ZMR) method, polycrystalline silicon thin films with large grains and relative high carrier mobility were obtained, which could act as a seeding layer. The maximum grain of these films was about one millimeter in width and some millimeters in length, and hole mobility exceeded 50 cm2·V-1·s-1. Active silicon films deposited on these seeding layers showed the same morphologies. These results showed that these films have great potential for photovoltaic applications.