CAJ | 학술논문

研究了电子隧穿出射端嵌入1.2 μm厚n型弱掺杂GaAs层的三势垒双阱隧穿结构,观察到了隧穿峰谷比高达36的光生空穴共振隧穿峰.研究证实1.2 μm厚n型弱掺杂GaAs层在光照下产生的大量光生空穴以及空穴隧穿出射端的23 nm宽的量子阱中量子化的空穴能级对空穴隧穿谷电流的限制作用,是导致高峰谷比的光生空穴隧穿现象的主要原因.
연구료전자수천출사단감입1.2 μm후n형약참잡GaAs층적삼세루쌍정수천결구,관찰도료수천봉곡비고체36적광생공혈공진수천봉.연구증실1.2 μm후n형약참잡GaAs층재광조하산생적대량광생공혈이급공혈수천출사단적23 nm관적양자정중양자화적공혈능급대공혈수천곡전류적한제작용,시도치고봉곡비적광생공혈수천현상적주요원인.
By integrating a resonant tunneling diode with a 1.2 μm-thick slightly doped n-type GaAs layer in a three-barrier, two-well resonant tunneling structure, the resonant tunneling of photo-excited holes exhibits a value of peak-to-valley current ratio (PVCR) as high as 36. A vast number of photo-excited holes generated in this 1.2 μm-thick slightly doped ntype GaAs layer, and the quantization of hole levels in a 23nm-thick quantum well on the outgoing side of hole tunneling out off the resonant tunneling diode which greatly depressed the valley current of the holes, are thought to be responsible for such greatly enhanced PVCR.