新型炭材料
新型炭材料
신형탄재료
NEW CARBON MATERIALS
2009年
2期
97-101
,共5页
黄柏仁%叶忠信%汪岛军%谭振台%宋健民
黃柏仁%葉忠信%汪島軍%譚振檯%宋健民
황백인%협충신%왕도군%담진태%송건민
场发射%非晶碳膜%铜纳米线(CuNWs)%阳极氧化铝(AAO)
場髮射%非晶碳膜%銅納米線(CuNWs)%暘極氧化鋁(AAO)
장발사%비정탄막%동납미선(CuNWs)%양겁양화려(AAO)
Field emission%Amorphous carbon%Copper nanowires (CuNWs)%Anodic aluminum oxide (AAO)
以阴极电弧法,分别于硅基材与铜纳米线(CuNWs)/硅基材(其中铜纳米线系阳极氧化铝(AAO)模板技术成长于硅基材上)沉积非晶碳膜,,分别以扫描电子显微镜(SEM)、原子力电子显微镜(AFM)和X光电子光谱仪(XPS)表征了非晶碳膜/铜纳米线/硅基材与非品碳膜/硅基材两者之表面形貌、粗糙度、结构及键结等物理特性.并比较两者之电子场发射特性.研究结果显示:两者都拥有低起始电场及高电流密度,其中非品碳膜/铜纳米线/硅基材的场发射起始电压为3.75 V/μm优于非品碳膜/硅基材的15 V/μm,因此非晶碳膜/铜纳米线/硅基材更适用于场发射平面显示器(FED)之发射子,可应用于高稳定性及低成本之场发射平面显示器之研发.
以陰極電弧法,分彆于硅基材與銅納米線(CuNWs)/硅基材(其中銅納米線繫暘極氧化鋁(AAO)模闆技術成長于硅基材上)沉積非晶碳膜,,分彆以掃描電子顯微鏡(SEM)、原子力電子顯微鏡(AFM)和X光電子光譜儀(XPS)錶徵瞭非晶碳膜/銅納米線/硅基材與非品碳膜/硅基材兩者之錶麵形貌、粗糙度、結構及鍵結等物理特性.併比較兩者之電子場髮射特性.研究結果顯示:兩者都擁有低起始電場及高電流密度,其中非品碳膜/銅納米線/硅基材的場髮射起始電壓為3.75 V/μm優于非品碳膜/硅基材的15 V/μm,因此非晶碳膜/銅納米線/硅基材更適用于場髮射平麵顯示器(FED)之髮射子,可應用于高穩定性及低成本之場髮射平麵顯示器之研髮.
이음겁전호법,분별우규기재여동납미선(CuNWs)/규기재(기중동납미선계양겁양화려(AAO)모판기술성장우규기재상)침적비정탄막,,분별이소묘전자현미경(SEM)、원자력전자현미경(AFM)화X광전자광보의(XPS)표정료비정탄막/동납미선/규기재여비품탄막/규기재량자지표면형모、조조도、결구급건결등물리특성.병비교량자지전자장발사특성.연구결과현시:량자도옹유저기시전장급고전류밀도,기중비품탄막/동납미선/규기재적장발사기시전압위3.75 V/μm우우비품탄막/규기재적15 V/μm,인차비정탄막/동납미선/규기재경괄용우장발사평면현시기(FED)지발사자,가응용우고은정성급저성본지장발사평면현시기지연발.
The field emission properties of amorphous carbon/copper nanowire (CuNW)/Si composites have been in-vestigated. The CuNWs (50-80nm in diameters) were deposited anodically within the pores of a porous anodic alumi-num oxide (AAO) nano-template by electrolysis of a CuSO4-H2 SO4 solution at room temperature using DC current. Two kinds of structure, amorphous carbon/Si and amorphous carbon/CuNWs/Si , were used. Both of them can emit electrons in vacuum towards an anode at a very low tum-on field. Field emission from the amorphous carbon/CuNWs/Si shows a fourfold decrease in turn-on field compared with the amorphous carbon/Si. Results indicated that the electrons were emitted under the effect of an enhanced field because of the geometry of the amorphous carbon sample.