CAJ | 학술논문

利用反应磁控溅射法制备了半导体锡锑氧化物薄膜 (TAO). 根据霍尔效应测试结果,当Sn/Sb 原子比处于0.22~0.33范围内时,TAO薄膜是p型导电的,在此范围之外,TAO薄膜是n型导电的. 光学带隙测量结果表明,不同Sn/Sb比的TAO薄膜的禁带宽度基本相同(～3.9eV).构造了一个全透明的PN结,其中n区为Sn/Sb原子比为0.5的TAO薄膜, p区为Sn/Sb原子比为0.33的TAO薄膜.n区TAO的电极用铟锡氧化物(ITO),p区TAO的电极用Cu薄膜.实验结果表明,由于两种导电类型的TAO薄膜具有相同的禁带宽度,上述透明PN结构具有典型的准同质PN结的整流特性.
이용반응자공천사법제비료반도체석제양화물박막 (TAO). 근거곽이효응측시결과,당Sn/Sb 원자비처우0.22~0.33범위내시,TAO박막시p형도전적,재차범위지외,TAO박막시n형도전적. 광학대극측량결과표명,불동Sn/Sb비적TAO박막적금대관도기본상동(～3.9eV).구조료일개전투명적PN결,기중n구위Sn/Sb원자비위0.5적TAO박막, p구위Sn/Sb원자비위0.33적TAO박막.n구TAO적전겁용인석양화물(ITO),p구TAO적전겁용Cu박막.실험결과표명,유우량충도전류형적TAO박막구유상동적금대관도,상술투명PN결구구유전형적준동질PN결적정류특성.
Transparent and semiconductive tin-antimony oxide (TAO) films were fabricated by reactive DC magnetron sputtering. According to the results of Hall effect measurement, TAO films are p-type for Sn/Sb atomic ratio in the range of 0.22-0.33, while TAO films with Sn/Sb atomic ratio out of this range are n-type. Optical band-gap measurement results show that the band-gap of all TAO films with various Sn/Sb ratios is almost identical (～3.91eV). Finally, a PN junction based on n-TAO and p-TAO was fabricated using ITO as the electrode for n-TAO and a thin layer of Cu as the electrode for p-TCO. It shows typical rectifying characteristics of a homo-junction diode since both types of TAO films have almost the same band-gap values.