CAJ | 학술논문

提出了一种发射极指分段和非均匀发射极指长、指间距组合的新型器件结构,以改善多指功率硅锗异质结双极晶体管(SiGe HBT)的热稳定性.考虑器件具有多层热阻,发展建立了相应的热传导模型.以十指功率SiGe HBT为例,运用有限元方法对其进行热模拟,得到三维温度分布.与传统发射极结构器件相比,新结构器件最高结温从416.3 K下降到405 K,各个发射指上的高低温差从7 K～8 K下降为1.5 K～3 K,热阻值下降14.67 K/W,器件整体温度分布更加均匀.
제출료일충발사겁지분단화비균균발사겁지장、지간거조합적신형기건결구,이개선다지공솔규타이질결쌍겁정체관(SiGe HBT)적열은정성.고필기건구유다층열조,발전건립료상응적열전도모형.이십지공솔SiGe HBT위례,운용유한원방법대기진행열모의,득도삼유온도분포.여전통발사겁결구기건상비,신결구기건최고결온종416.3 K하강도405 K,각개발사지상적고저온차종7 K～8 K하강위1.5 K～3 K,열조치하강14.67 K/W,기건정체온도분포경가균균.
A novel segmented emitter structure with non-uniform finger length and spacing was proposed to improve thermal stability of multi-finger SiGe HBT power device. Considering various thermal resistances of different components for multi-finger HBT, an appropriate thermal model was developed. By using finite element thermal simulation model, thermal simulation was performed for ten-finger power SiGe HBT with novel composite emitter structure and 3-dimensional temperature distribution was obtained. Compared with traditional emitter structure device, the maximum junction temperature of the proposed novel structure was reduced from 416.3 K to 405 K, the maximum temperature difference of each emitter finger was reduced to 1.5 K - 3 K range from 7 K - 8 K range, and thermal resistance decreased by 14.67 K/W, thus enhancing temperature distribution uniformity of the device.