人工晶体学报
人工晶體學報
인공정체학보
2006年
4期
757-760,756
,共5页
姜本学%赵志伟%徐晓东%宋平新%王晓丹%徐军%邓佩珍
薑本學%趙誌偉%徐曉東%宋平新%王曉丹%徐軍%鄧珮珍
강본학%조지위%서효동%송평신%왕효단%서군%산패진
Nd:GGG%Nd:YAG%浓度猝灭%荧光寿命
Nd:GGG%Nd:YAG%濃度猝滅%熒光壽命
Nd:GGG%Nd:YAG%농도졸멸%형광수명
Nd:GGG%Nd:YAG%concentration quenching%fluorescence lifetime
由于Nd3+离子半径0.112nm和Y3+离子半径0.101nm相差10.9%,使得Nd3+离子非常难于进入YAG晶体中.我们用温度梯度法生长了大尺寸高浓度(2.8at%)的Nd:YAG晶体,同时与用提拉法Nd:GGG晶体进行了比较.分析了高浓度掺杂Nd:GGG和 Nd:YAG晶体浓度猝灭问题.研究了不同浓度掺杂的猝灭效应.在同样的掺杂浓度下,我们发现它们的猝灭程度不同,其原因是两种晶体中ΔE(-)mism和ΔE(+)mism不同.
由于Nd3+離子半徑0.112nm和Y3+離子半徑0.101nm相差10.9%,使得Nd3+離子非常難于進入YAG晶體中.我們用溫度梯度法生長瞭大呎吋高濃度(2.8at%)的Nd:YAG晶體,同時與用提拉法Nd:GGG晶體進行瞭比較.分析瞭高濃度摻雜Nd:GGG和 Nd:YAG晶體濃度猝滅問題.研究瞭不同濃度摻雜的猝滅效應.在同樣的摻雜濃度下,我們髮現它們的猝滅程度不同,其原因是兩種晶體中ΔE(-)mism和ΔE(+)mism不同.
유우Nd3+리자반경0.112nm화Y3+리자반경0.101nm상차10.9%,사득Nd3+리자비상난우진입YAG정체중.아문용온도제도법생장료대척촌고농도(2.8at%)적Nd:YAG정체,동시여용제랍법Nd:GGG정체진행료비교.분석료고농도참잡Nd:GGG화 Nd:YAG정체농도졸멸문제.연구료불동농도참잡적졸멸효응.재동양적참잡농도하,아문발현타문적졸멸정도불동,기원인시량충정체중ΔE(-)mism화ΔE(+)mism불동.
The ionic radius of Y3+ is 0.101nm and of Nd3+ is 0.112nm, a difference of about 10.9%. Therefore it is difficult to grow highly doped Nd:YAG. In this paper we have grown Large sized highly doped(2.8at.%) Nd:YAG crystals by TGT method. Large sized(φ>70mm) high quality Nd:GGG crystals have been grown by CZ method for comparison at the same time. The concentration quenching in Nd:GGG crystals with high Nd3+ doping level was demonstrated and studied as well. The comparisons of the concentration quenching effects between the Nd:GGG and Nd:YAG crystals have been listed. The reason why GGG crystal has weaker concentration quenching effect than YAG crystals may be that: YAG crystal has a stronger field strength than that of GGG crystal, which leads to higher values of ΔE(-)mism and ΔE(+)mism in GGG crystal and this causes weaker concentration quenching effect in Nd:GGG crystal.