光电工程
光電工程
광전공정
OPTO-ELECTRONIC ENGINEERING
2010年
2期
40-44
,共5页
郑华靖%蒋亚东%徐建华%杨亚杰
鄭華靖%蔣亞東%徐建華%楊亞傑
정화정%장아동%서건화%양아걸
PEDOT%LB膜法%OLED%导电聚合物
PEDOT%LB膜法%OLED%導電聚閤物
PEDOT%LB막법%OLED%도전취합물
PEDOT%LB film method%OLED%conducting composite
采用Langmuir-Blodgett(LB)膜静电诱导沉积法制备聚3,4-乙烯二氧噻吩(PEDOT)高度有序导电聚合物复合薄膜,研究了薄膜的导电性能并进一步研究薄膜在改善器件性能方面的作用.并将其应用于有机电致发光二极管(OLED)器件的空穴缓冲层,将聚3,4-乙烯二氧噻吩/聚苯乙烯磺酸(PEDOT/PSS)复合LB沉积于纳米铟锡金属氧化物(ITO)电极上,制备了以复合LB膜为空穴缓冲层的OLED器件.发现复合LB膜改善了器件性能(启动电压降低,最大亮度增加),但进一步的研究表明LB膜器件在一定时间后出现性能劣化.I-V特性和X射线反射率(XRR)分析表明,薄膜的结构发生一定程度的改变是导致器件性能变差的可能原因.
採用Langmuir-Blodgett(LB)膜靜電誘導沉積法製備聚3,4-乙烯二氧噻吩(PEDOT)高度有序導電聚閤物複閤薄膜,研究瞭薄膜的導電性能併進一步研究薄膜在改善器件性能方麵的作用.併將其應用于有機電緻髮光二極管(OLED)器件的空穴緩遲層,將聚3,4-乙烯二氧噻吩/聚苯乙烯磺痠(PEDOT/PSS)複閤LB沉積于納米銦錫金屬氧化物(ITO)電極上,製備瞭以複閤LB膜為空穴緩遲層的OLED器件.髮現複閤LB膜改善瞭器件性能(啟動電壓降低,最大亮度增加),但進一步的研究錶明LB膜器件在一定時間後齣現性能劣化.I-V特性和X射線反射率(XRR)分析錶明,薄膜的結構髮生一定程度的改變是導緻器件性能變差的可能原因.
채용Langmuir-Blodgett(LB)막정전유도침적법제비취3,4-을희이양새분(PEDOT)고도유서도전취합물복합박막,연구료박막적도전성능병진일보연구박막재개선기건성능방면적작용.병장기응용우유궤전치발광이겁관(OLED)기건적공혈완충층,장취3,4-을희이양새분/취분을희광산(PEDOT/PSS)복합LB침적우납미인석금속양화물(ITO)전겁상,제비료이복합LB막위공혈완충층적OLED기건.발현복합LB막개선료기건성능(계동전압강저,최대량도증가),단진일보적연구표명LB막기건재일정시간후출현성능열화.I-V특성화X사선반사솔(XRR)분석표명,박막적결구발생일정정도적개변시도치기건성능변차적가능원인.
A Langmuir-Blodgett (LB) inducing method was firstly used to prepare single layer and multilayer conducting composite PEDOT-PSS film. The application of PEDOT nanostructure to improve organic electric device performance of Organic Light Emitting Diode (OLED) was studied. Furthermore, these conducting polymeric LB films were taken as the hole transfer layer in OLED device, and an efficiency enhancement of carrier injection was observed, which was ascribed to the ordered structure of these film. However, a further investigation shows that this PEDOT-PSS film has inferior structure ability.