微电子学
微電子學
미전자학
MICROELECTRONICS
2010年
2期
204-208
,共5页
吴贵能%周玮%李儒章%董少青
吳貴能%週瑋%李儒章%董少青
오귀능%주위%리유장%동소청
模拟集成电路%带隙基准电压源%曲率补偿%CMOS
模擬集成電路%帶隙基準電壓源%麯率補償%CMOS
모의집성전로%대극기준전압원%곡솔보상%CMOS
Analog IC%Bandgap reference (BGR)%Curvature compensation%CMOS
详细分析了基本低压带隙基准电压源电路实现二阶温度曲率补偿成立的条件.采用0.35 μm标准CMOS工艺库,在-50 ℃～+120 ℃温度范围内,通过选择合适的电阻比例及MOSFET的沟道调制效应系数λ,获得了任意输出电压值的二阶曲率补偿基准电压源,且具有较低的温度系数.
詳細分析瞭基本低壓帶隙基準電壓源電路實現二階溫度麯率補償成立的條件.採用0.35 μm標準CMOS工藝庫,在-50 ℃～+120 ℃溫度範圍內,通過選擇閤適的電阻比例及MOSFET的溝道調製效應繫數λ,穫得瞭任意輸齣電壓值的二階麯率補償基準電壓源,且具有較低的溫度繫數.
상세분석료기본저압대극기준전압원전로실현이계온도곡솔보상성립적조건.채용0.35 μm표준CMOS공예고,재-50 ℃～+120 ℃온도범위내,통과선택합괄적전조비례급MOSFET적구도조제효응계수λ,획득료임의수출전압치적이계곡솔보상기준전압원,차구유교저적온도계수.
Specific requirements for 2nd-order temperature curvature compensation were analyzed based on low voltage bandgap reference (BGR) circuit. Results from simulation based on standard CMOS 0.35 μm technology showed that, by choosing proper resistance ratio and channel-length modulation coefficient λ for MOSFET, the proposed universal precise curvature compensated BGR could develop arbitrary value of output voltage reference and achieve low temperature coefficient over a wide temperature range from -50 ℃ to +120 ℃.
