CAJ | 학술논문

本文建立了采用分子束外延法制备InGaP/GaAs异质结构的热力学模型,其中考虑了两个重要的因素,由晶格失配引起的内在应力和InP的脱附.所得到的模型与现有实验结果匹配较好.该模型的实验结果表明在InGaP的生长过程中,生长温度,In/Ga束流比及合金组分之间的相互关系,同时也与实验数据相吻合.该模型对于其他气相沉积生长方式也具有一定的适用性.
본문건립료채용분자속외연법제비InGaP/GaAs이질결구적열역학모형,기중고필료량개중요적인소,유정격실배인기적내재응력화InP적탈부.소득도적모형여현유실험결과필배교호.해모형적실험결과표명재InGaP적생장과정중,생장온도,In/Ga속류비급합금조분지간적상호관계,동시야여실험수거상문합.해모형대우기타기상침적생장방식야구유일정적괄용성.
A thermodynamic model for molecular beam epitaxy(MBE) growth of InGaP/GaAs heterostructures was established that considers two key factors, intrinsic strain due to the lattice mismatch and the desorption of InP. The derivation of the model is presented as well as comparisons with existing experimental data. The calculation results of this model indicated that the interactions among growth temperature, In/Ga flux ratio and alloy composition during the growth of InGaP which accord with the experimental data. The model is also available for other vapor deposition methods.