CAJ | 학술논문

借助深能级瞬态傅里叶谱研究了钒离子注入在SiC中引入的深能级陷阱.掺人的钒在4H-SiC中形成两个深受主能级,分别位于导带下0.81和1.02eVt处,其电子俘获截面分别为7.0 × 10-16和6.0×10-16cm2.对钒离子注入4H-SiC样品进行低温光致发光测量,同样发现两个电子陷阱,分别位于导带下0.80和1.6eV处.结果表明,在n型4H-SiC掺入杂质钒可以同时形成两个深的钒受主能级,分别位于导带下0.8±0.01和1.1±0.08eV处.
차조심능급순태부리협보연구료범리자주입재SiC중인입적심능급함정.참인적범재4H-SiC중형성량개심수주능급,분별위우도대하0.81화1.02eVt처,기전자부획절면분별위7.0 × 10-16화6.0×10-16cm2.대범리자주입4H-SiC양품진행저온광치발광측량,동양발현량개전자함정,분별위우도대하0.80화1.6eV처.결과표명,재n형4H-SiC참입잡질범가이동시형성량개심적범수주능급,분별위우도대하0.8±0.01화1.1±0.08eV처.
Deep level transient Fourier spectroscopy (DLTFS) measurements are used to characterize the deep impurity levels in n-type 4H-SiC by vanadium ions implantation. Two acceptor levels of vanadium at Ec - 0.81 and Ec - 1.02eV with the electron capture cross section of 7. 0 × 10-16 and 6. 0 x 10-16 cm2 are observed, respectively. Low-temperature.photoluminescence measurements in the range of 1.4～3.4eV are also performed on the sample,which reveals the formation of two electron traps at 0. 80 and 1.16eV below the conduction band. These traps indicate that vanadium doping leads to the formation of two deep acceptor levels in 4H-SiC,with the location of 0. 8 ± 0. 01 and 1.1 ± 0.08eV below the conduction band.