CAJ | 학술논문

研究了90 nm CMOS工艺下浅槽隔离技术产生的x轴应力对NMOSFET电学性能的影响.用新一代集成工艺仿真软件Sentaurus TCAD对不同有源区宽度(Sa=0.4 μm～3.2 μm,间隔0.4 μm)的90 nm沟长NMOSFET进行了仿真并和测量数据进行了对比.随着有源区宽度从3.2 μm减小到0.4 μm,NMOSFET的饱和电流减小了7%,但其阈值电压增大了8%.这说明有源区宽度的减小使得STI应力增大,进一步减小了NMOSFET中电子迁移率和沟道中halo注入浓度的扩散,使得饱和电流退化,阈值电压增加.
연구료90 nm CMOS공예하천조격리기술산생적x축응력대NMOSFET전학성능적영향.용신일대집성공예방진연건Sentaurus TCAD대불동유원구관도(Sa=0.4 μm～3.2 μm,간격0.4 μm)적90 nm구장NMOSFET진행료방진병화측량수거진행료대비.수착유원구관도종3.2 μm감소도0.4 μm,NMOSFET적포화전류감소료7%,단기역치전압증대료8%.저설명유원구관도적감소사득STI응력증대,진일보감소료NMOSFET중전자천이솔화구도중halo주입농도적확산,사득포화전류퇴화,역치전압증가.
This paper investigates the effects of x-stress in the MOS channel induced by shallow trench isolation(STI)for different length in active source/drain regions(Sa). We simulate the NMOS for 90 nm gate length with eight Sa=0.4 μm～3.2 μm with 0.4 μm increment by using TCAD simulation and compared to the measured data. As Sa decreases, the device characteristics change. For Sa decreases from 3.2 μm to 0.4 μm, the NMOSFET saturation current decreases by 7% and the Vth increases by 8%. This indicates that smaller Sa brings bigger stress, which decreases the electron mobility and the diffusion of halo impurity(boron)in the NMOSFET, which raises the threshold voltage.