CAJ | 학술논문

利用分子动力学模拟方法研究了在低能F原子刻蚀SiC表面过程中样品温度对刻蚀的影响.由模拟结果可知,随着温度的升高, F在样品表面的沉积量和散射量均呈下降趋势,而发生溅射的F的量和与样品作用生成挥发物质的F的量逐渐增加.Si的刻蚀量均随着温度的升高而升高.样品中Si原子的刻蚀主要是通过生成SiF_4得以实现的,C原子的刻蚀主要是通过生成CF_x(x=1～3)等挥发性物质实现的.
이용분자동역학모의방법연구료재저능F원자각식SiC표면과정중양품온도대각식적영향.유모의결과가지,수착온도적승고, F재양품표면적침적량화산사량균정하강추세,이발생천사적F적량화여양품작용생성휘발물질적F적량축점증가.Si적각식량균수착온도적승고이승고.양품중Si원자적각식주요시통과생성SiF_4득이실현적,C원자적각식주요시통과생성CF_x(x=1～3)등휘발성물질실현적.
The influence of the SiC surface temperature on the radical fluorine etching technique was simulated,based on molecular dynamics theory.The simulated results show that the SiC surface temperature significantly affects the F etching.For instance,as the surface temperature rises up,the numbers of fluorine atoms,deposited on and scattered by SiC surface,decrease;whereas,the numbers of the sputtering fluorine atoms and the reactive fluorine atoms with surface to produce volatile compounds increase.In addition,the quantity of the F-etched Si atoms increases with an incrase of the surface temperature.The possible mechanism of Si etching may be the formation of SiF_4;and the existence of CF_x(x=1～3)may lead to the etching away of C atoms.