CAJ | 학술논문

对于微小尺寸的N型宽禁带立方氮化硼(CBN)半导体晶体,在施加恒稳电场的情况下,观察到电致发光现象.通过置CBN单晶样品于光栅单色仪抛物面反射镜焦点的方法,对于CBN的蓝紫光辐射获得了测试系统的最大入射光通量和理想的信噪比.在350～450 nm波长范围内,CBN加上4.7×10~6 V·cm~(-1)恒稳电场条件下,测昔出立方氮化硼的蓝紫光发射光谱.同时,结合基于第一性原理的GGA方法计算出的立方氮化硼能带结构和电子态密度,以及测量得到的非线性j-E关系和电击穿特性,讨论了发光机理.提出了在雪崩击穿前的缺陷偶极子极化和击穿后,产生大量的激发态电子,电子在Γ能谷和X能谷间迁移的发光机制.
대우미소척촌적N형관금대립방담화붕(CBN)반도체정체,재시가항은전장적정황하,관찰도전치발광현상.통과치CBN단정양품우광책단색의포물면반사경초점적방법,대우CBN적람자광복사획득료측시계통적최대입사광통량화이상적신조비.재350～450 nm파장범위내,CBN가상4.7×10~6 V·cm~(-1)항은전장조건하,측석출립방담화붕적람자광발사광보.동시,결합기우제일성원리적GGA방법계산출적립방담화붕능대결구화전자태밀도,이급측량득도적비선성j-E관계화전격천특성,토론료발광궤리.제출료재설붕격천전적결함우겁자겁화화격천후,산생대량적격발태전자,전자재Γ능곡화X능곡간천이적발광궤제.
The electroluminescence effect can be observed by the micro N-type wide-gap CBN semiconductor crystal under the condition of static eletric field.The micro N-type CBN crystal was fixed on the focus of the parabolic reflector of grating monochromator,and the maximum value of transmission ratio and the ideal signal-noise ratio can be obtained.Under the condition of static ectric-field intensity (4.7×10~6 V·cm~(-1)),the blue-violet light-emitting spectrum of the CBN crystal was measured in the range from 350 to 450 nm.The construction of the CBN energy band,which was calculated with the First-principles method,the nonlinear relationship between current density and the ectric-field intensity that was measured and the phenomenon of electrical break-down were considered together to enable us to discuss the luminescence mechanism.Finally,the authors came up with the luminescence mechanism concerning electron migration from F energy valley to X energy valley.The large number of excited electrons we talked about were generated by polarization and breakdown of defect dipole before avalanche breakdown occurred.