CAJ | 학술논문

对比研究了SiC材料在CF4+O2混合气体中的ICP刻蚀和RIE刻蚀,获得了刻蚀速率、刻蚀表面粗糙度随刻蚀功率、偏置功率、工作真空、氧含量等工艺条件的变化规律,研究结果表明,通过牺牲一定的刻蚀速率可以获得原子量级的刻蚀表面粗糙度,能够满足SiC微波功率器件研制的要求.
대비연구료SiC재료재CF4+O2혼합기체중적ICP각식화RIE각식,획득료각식속솔、각식표면조조도수각식공솔、편치공솔、공작진공、양함량등공예조건적변화규률,연구결과표명,통과희생일정적각식속솔가이획득원자량급적각식표면조조도,능구만족SiC미파공솔기건연제적요구.
The shallow etching technologies of SiC material by inductively coupled plasma (ICP) and by reactive ion etching (RIE) in a mixture of CF4+O2 were experimentally studied.The impacts of etching conditions,including the etching power,bias voltage,etching gases flow rate and oxygen partial pressure,on the etching rate and surface roughness of the etched SiC material were evaluated.The microstructures of the etched SiC surfaces were characterized with atomic force microscopy (AFM).The results show that the etching rate strongly affects the surface flatness.When it comes to the device grade SiC material,a compromise of the etching rate results in a root-mean-square roughness at atomic scale of the etched surfaces