稀有金属材料与工程
稀有金屬材料與工程
희유금속재료여공정
RARE METAL MATERIALS AND ENGINEERNG
2009年
z2期
256-259
,共4页
车全德%范素华%张丰庆%马建平%于冉%田清波
車全德%範素華%張豐慶%馬建平%于冉%田清波
차전덕%범소화%장봉경%마건평%우염%전청파
铁电薄膜%钐掺杂%取向
鐵電薄膜%釤摻雜%取嚮
철전박막%삼참잡%취향
ferroelectric film%Sm doping%orientation
利用溶胶凝胶工艺在Pt/TiO_2 /SiO_2 /Si衬底上制备了Ca_0.4Sr_0.6Sm_xBi_4-xTi_4O_(15)铁电薄膜.研究了不同钐掺量对薄膜的显微结构、晶粒取向及铁电性能的影响.结果表明:钐掺杂对钙锶铋钛铁电薄膜既有抑制氧空位所导致的畴钉扎作用,也有抑制晶粒生长发育的作用.当钐掺量x=0.05时薄膜样品晶粒发育较良好,沿a轴择优取向,I_((200))/I_((119))=0.869;样品铁电性能优良,剩余极化强度P_r=10.2 μC/cm~2,矫顽场强度E_c=120 kV/cm.
利用溶膠凝膠工藝在Pt/TiO_2 /SiO_2 /Si襯底上製備瞭Ca_0.4Sr_0.6Sm_xBi_4-xTi_4O_(15)鐵電薄膜.研究瞭不同釤摻量對薄膜的顯微結構、晶粒取嚮及鐵電性能的影響.結果錶明:釤摻雜對鈣鍶鉍鈦鐵電薄膜既有抑製氧空位所導緻的疇釘扎作用,也有抑製晶粒生長髮育的作用.噹釤摻量x=0.05時薄膜樣品晶粒髮育較良好,沿a軸擇優取嚮,I_((200))/I_((119))=0.869;樣品鐵電性能優良,剩餘極化彊度P_r=10.2 μC/cm~2,矯頑場彊度E_c=120 kV/cm.
이용용효응효공예재Pt/TiO_2 /SiO_2 /Si츤저상제비료Ca_0.4Sr_0.6Sm_xBi_4-xTi_4O_(15)철전박막.연구료불동삼참량대박막적현미결구、정립취향급철전성능적영향.결과표명:삼참잡대개송필태철전박막기유억제양공위소도치적주정찰작용,야유억제정립생장발육적작용.당삼참량x=0.05시박막양품정립발육교량호,연a축택우취향,I_((200))/I_((119))=0.869;양품철전성능우량,잉여겁화강도P_r=10.2 μC/cm~2,교완장강도E_c=120 kV/cm.
Samarium doped calcium strontium bismuth titanium Ca_0.4Sr_0.6Sm_xBi_4-xTi_4O_(15) ferroelectric films were prepared on Pt/Ti/SiO_2/Si substrates by sol-gel method. The effect of Sm content on microstructure, growth orientation, ferroelectric of films were investigated. The result shows that Sm can inhibit the pining effect resulting form oxygen vacancies, hinder the grain growth and reduce the size of grain. The ferroelectric property of Ca_0.4Sr_0.6Bi_4Ti_4O_(15) can be improved by adding proper amount of Sm dopants. The Pr reaches a maximum value of 10.2 mC /cm~2 when E_c=120 kV/cm, and the I_((200))/I_((119)) reaches 0.869 when x=0.05. The film is preferred a-axis orientation, and the majority of grains in the film are spheroidal and the grain size is about 140 nm.