功能材料
功能材料
공능재료
JOURNAL OF FUNCTIONAL MATERIALS
2010年
2期
264-267
,共4页
曹玉萍%薛成山%石锋%孙海波%刘文军%郭永福
曹玉萍%薛成山%石鋒%孫海波%劉文軍%郭永福
조옥평%설성산%석봉%손해파%류문군%곽영복
GaN%纳米线%氨气流量%溅射%生长机制
GaN%納米線%氨氣流量%濺射%生長機製
GaN%납미선%안기류량%천사%생장궤제
GaN%nanowires%ammonia flow rate%sputtering%growth mechanism
利用磁控溅射技术在Si衬底上沉积Ga_2O_3/Co薄膜,然后在不同氨气流量下于950℃退火15min.采用X射线衍射(XRD)、扫描电子显微镜(SEM)、傅立叶红外吸收(FTIR)光谱、高分辨透射电子显微镜(HRTEM)和光致发光谱(PL)对样品进行了分析表征.结果表明,氨气流量对GaN纳米线的生长及性能有很大影响.简单讨论了GaN纳米线的生长机理.
利用磁控濺射技術在Si襯底上沉積Ga_2O_3/Co薄膜,然後在不同氨氣流量下于950℃退火15min.採用X射線衍射(XRD)、掃描電子顯微鏡(SEM)、傅立葉紅外吸收(FTIR)光譜、高分辨透射電子顯微鏡(HRTEM)和光緻髮光譜(PL)對樣品進行瞭分析錶徵.結果錶明,氨氣流量對GaN納米線的生長及性能有很大影響.簡單討論瞭GaN納米線的生長機理.
이용자공천사기술재Si츤저상침적Ga_2O_3/Co박막,연후재불동안기류량하우950℃퇴화15min.채용X사선연사(XRD)、소묘전자현미경(SEM)、부립협홍외흡수(FTIR)광보、고분변투사전자현미경(HRTEM)화광치발광보(PL)대양품진행료분석표정.결과표명,안기류량대GaN납미선적생장급성능유흔대영향.간단토론료GaN납미선적생장궤리.
Ga_2O_3/Co films were deposited on the Si substrates through magnetron sputtering technique.Then the films were annealed at 950℃ for 15min at different ammonia flow rate.The samples were characterized by X-ray diffraction (XRD),scanning electron microscopy (SEM),Fourier transformed infrared (FTIR) spectroscopy,high resolution transmission microscopy (HRTEM) and photoluminescence (PL).The results show that the ammonia flow rate had a great effect on the growth and characterization of GaN nanowires.The growth mechanism is briefly discussed.
