CAJ | 학술논문

用慢正电子束探针测量了经剂量为5×1016cm-2的140keVHe+注入的Si(100)单晶S参数与正电子入射能量的关系,得到了注入产生缺陷的分布规律,发现近表面区域损伤不大,缺陷主要是直径小于1nm的空位或空位团,较深的射程末端区域损伤严重,缺陷主要是微空洞和微气泡。对退火效应的研究表明,低温下退火空位缺陷得到了很好的消除,而高温下退火微空洞和微气泡发生融合，而且尺度增加。
용만정전자속탐침측량료경제량위5×1016cm-2적140keVHe+주입적Si(100)단정S삼수여정전자입사능량적관계,득도료주입산생결함적분포규률,발현근표면구역손상불대,결함주요시직경소우1nm적공위혹공위단,교심적사정말단구역손상엄중,결함주요시미공동화미기포。대퇴화효응적연구표명,저온하퇴화공위결함득도료흔호적소제,이고온하퇴화미공동화미기포발생융합，이차척도증가。
Si(100) crystal implanted by 5×1016cm-2，140keV He+ was probed byslow positron beam， and defect distribution along depth was obtained from the relation between S parameter and positron incidence energy. The near surface region of implanted sample was only slightly damaged. Small vacancies and vacancy clusters less than 1nm in diameter were the dominant defects， while the deeper region around the He+ projected range was heavily damaged and had dense larger helium microbubbles and microvoids. Thermal anneal study at different temperatures showed that low temperature annealing could remove most vacancy-type defects effectively. However， annealing at high temperature enlarged the diameters of microbubbles and microvoids.