CAJ | 학술논문

AlInN三元合金是优良的Ⅲ-Ⅴ族氮化物半导体材料,具有优良的光学和电学性能,在光电子器件应用方面具有广阔的应用前景.详细评述了近年来AlInN薄膜材料在生长技术、晶体结构、表面形貌、热学特性、光电特性等方面的研究,为AlInN三元合金在光电方面的基础和应用研究提供了重要参考.
AlInN삼원합금시우량적Ⅲ-Ⅴ족담화물반도체재료,구유우량적광학화전학성능,재광전자기건응용방면구유엄활적응용전경.상세평술료근년래AlInN박막재료재생장기술、정체결구、표면형모、열학특성、광전특성등방면적연구,위AlInN삼원합금재광전방면적기출화응용연구제공료중요삼고.
AlInN is one of Ⅲ-Ⅴ nitride semiconductor materials with excellent optical and electrical properties,and has vast potential in photoelectronic device application. The recent studies on the growth methods, crystal structures, surface morphologies, thermal characteristics, and optoelectronic properties of AlInN films were reviewed in detail in this article, which is promising for exploring applicable Ⅲ-Ⅴ nitride semiconductor materials in basic and/or applied optics, electronics, and opto-electronics.