CAJ | 학술논문

采用共沉积技术制备了AgTCNQ薄膜,并进行了红外、紫外光谱表征.利用微电子工艺制备了基于AgTCNQ薄膜的有机双稳态器件.研究发现,Ti/AgTCNQ/Au双稳态器件具有可逆、可重复的开关存储特性.将器件从初始的高阻态转变为低阻态的正向开关阈值电压为3.8～5V,将低阻态转变为高阻态的负向阈值电压仅为-3.5～-4.4V,与通常的CuTCNQ器件相比较小.这种基于AgTCNQ交叉结构的有机双稳态器件可应用于非易失性有机存储器.
채용공침적기술제비료AgTCNQ박막,병진행료홍외、자외광보표정.이용미전자공예제비료기우AgTCNQ박막적유궤쌍은태기건.연구발현,Ti/AgTCNQ/Au쌍은태기건구유가역、가중복적개관존저특성.장기건종초시적고조태전변위저조태적정향개관역치전압위3.8～5V,장저조태전변위고조태적부향역치전압부위-3.5～-4.4V,여통상적CuTCNQ기건상비교소.저충기우AgTCNQ교차결구적유궤쌍은태기건가응용우비역실성유궤존저기.
The AgTCNQ thin-film was prepared by vacuum vapor co-deposition and characterized by infrared spectral analysis,and then a uniform AgTCNQ (TCNQ= 7,7,8,8-tetracyanoquinodimethane) thin-film layer was sandwiched in a Ti/AgTCNQ/Au crossbar structure array as organic bistable devices (OBD). A reversible and reproducible memory switching property,caused by intermolecular charge transfer (CT) in the AgTCNQ thin-film,was observed in the organic bistable devices. The positive threshold voltage from the high impedance state to the low impedance was about 3.8～5V, with the reverse phenomenon occurring at a negative voltage of -3.5～ -4. 4V,lower than that with a CuTCNQ active layer.The crossbar array of OBDs with AgTCNQ is promising for nonvolatile organic memory applications.