吉林师范大学学报（自然科学版）
吉林師範大學學報（自然科學版）
길림사범대학학보（자연과학판）
JILIN NORMAL UNIVERSITY JOURNAL（NATURAL SCIENCE EDITION）
2007年
3期
8-12
,共5页
ZnO薄膜%真空退火%p型导电%磁控溅射%半导体
ZnO薄膜%真空退火%p型導電%磁控濺射%半導體
ZnO박막%진공퇴화%p형도전%자공천사%반도체
Zinc oxide%vacuum annealing%p-type conduction%rf magnetron sputtering%Semiconductor
本工作利用磁控溅射技术在石英衬底上生长出沿c轴择优取向的未掺杂ZnO薄膜,利用X射线衍射,光致发光,X射线光电子谱和Hall效应测量技术,研究了退火温度对结构、电学和光学性质的影响.发现真空退火可以提高ZnO的晶体和光学质量.生长的ZnO薄膜呈绝缘性质,经真空退火后变成导体,且导电类型和电性随退火温度而改变,并经590 ℃退火后获得p型ZnO.本文对退火影响ZnO结构、电学和光学性能的物理机制进行了讨论.
本工作利用磁控濺射技術在石英襯底上生長齣沿c軸擇優取嚮的未摻雜ZnO薄膜,利用X射線衍射,光緻髮光,X射線光電子譜和Hall效應測量技術,研究瞭退火溫度對結構、電學和光學性質的影響.髮現真空退火可以提高ZnO的晶體和光學質量.生長的ZnO薄膜呈絕緣性質,經真空退火後變成導體,且導電類型和電性隨退火溫度而改變,併經590 ℃退火後穫得p型ZnO.本文對退火影響ZnO結構、電學和光學性能的物理機製進行瞭討論.
본공작이용자공천사기술재석영츤저상생장출연c축택우취향적미참잡ZnO박막,이용X사선연사,광치발광,X사선광전자보화Hall효응측량기술,연구료퇴화온도대결구、전학화광학성질적영향.발현진공퇴화가이제고ZnO적정체화광학질량.생장적ZnO박막정절연성질,경진공퇴화후변성도체,차도전류형화전성수퇴화온도이개변,병경590 ℃퇴화후획득p형ZnO.본문대퇴화영향ZnO결구、전학화광학성능적물리궤제진행료토론.
We have studied the effect of annealing temperature on structural,electrical and optical properties of nominally undoped Zinc oxide (ZnO) thin films with c-axis orientations by X-ray diffraction(XRD), photoluminescence (PL), x-ray photoelectron spectroscopy(XPS) and Hall Effect measurement. The ZnO films were grown on quartz substrates by rf magnetron sputtering. Their crystalline and optical properties are improved by vacuum annealing. The as-grown ZnO film is insulating in conductivity, but its conduction changes with annealing temperature and a p-type undoped ZnO was obtained at annealing temperature of 590 ℃. Mechanisms of influence of annealing on structure, optical and electric properties of ZnO are discussed in the present paper.
