CAJ | 학술논문

利用电荷泵技术研究了4nm pMOSFET的热载流子应力下氧化层陷阱电荷的产生行为.首先,对于不同沟道长度下的热载流子退化,通过直接的实验证据,发现空穴陷阱俘获特性与应力时间呈对数关系.然后对不同应力电压、不同沟道长度下氧化层陷阱电荷(包括空穴和电子陷阱俘获)的产生做了进一步的分析.发现对于pMOSFET的热载流子退化,氧化层陷阱电荷产生分两步过程:在较短的应力初期,电子陷阱俘获是主要机制;而随着应力时间增加,空穴陷阱俘获作用逐渐显著,最后主导了氧化层陷阱电荷的产生.
이용전하빙기술연구료4nm pMOSFET적열재류자응력하양화층함정전하적산생행위.수선,대우불동구도장도하적열재류자퇴화,통과직접적실험증거,발현공혈함정부획특성여응력시간정대수관계.연후대불동응력전압、불동구도장도하양화층함정전하(포괄공혈화전자함정부획)적산생주료진일보적분석.발현대우pMOSFET적열재류자퇴화,양화층함정전하산생분량보과정:재교단적응력초기,전자함정부획시주요궤제;이수착응력시간증가,공혈함정부획작용축점현저,최후주도료양화층함정전하적산생.
The generation of oxide charge for 4nm pMOSFETs under hot-carrier stress is investigated by the charge pumping measurements.Firstly,the direct experimental evidences of logarithmic time dependence of hole trapping is observed for pMOSFETs with different channel lengths under hot-carrier stress.Thus,the relationships of oxide charge generation,including electron trapping and hole trapping effects,with different stress voltages and channel lengths are analyzed.It is also found that there is a two-step process in the generation of oxide charge for pMOSFETs.For a short stress time,electron trapping is predominant,whereas for a long stress time,hole trapping dominates the generation of oxide charge.