CAJ | 학술논문

研究了硼烷（B2H6）掺杂锗硅外延和磷烷（PH3）掺杂硅外延的外延速率和掺杂浓度与掺杂气体流量的关系．B浓度与B2H6流量基本上成正比例关系；生长了B浓度直至1019cm-3的多层阶梯结构，各层掺杂浓度均匀，过渡区约20nm，在整个外延层，Ge组分（x=0.20）均匀而稳定．PH3掺杂外延速率随PH3流量增加而逐渐下降；P浓度在PH3流量约为1.7sccm时达到了峰值（约6×1018cm-3）．分别按PH3流量递增和递减的顺序生长了多层结构用以研究PH3掺杂Si外延的特殊性质．
연구료붕완（B2H6）참잡타규외연화린완（PH3）참잡규외연적외연속솔화참잡농도여참잡기체류량적관계．B농도여B2H6류량기본상성정비례관계；생장료B농도직지1019cm-3적다층계제결구，각층참잡농도균균，과도구약20nm，재정개외연층，Ge조분（x=0.20）균균이은정．PH3참잡외연속솔수PH3류량증가이축점하강；P농도재PH3류량약위1.7sccm시체도료봉치（약6×1018cm-3）．분별안PH3류량체증화체감적순서생장료다층결구용이연구PH3참잡Si외연적특수성질．
Growth rate and doping concentration，as a function of the flow of doping gases of B2H6-doped SiGe epitaxy and PH3-doped Si epitaxy，have been studied.B concentration is basically proportional to the flow of B2H6.Si0.8Ge0.2 multi-layer films doped with B concentration up to 1019cm-3 have been grown and sharp doping transitions have been obtained,The Ge composition (x=0.20) is stable and flat throughout the entire epi-layer.Growth rate of PH3-doped Si epitaxy decreases with the flow of PH3　and P concentration can reach a peak value of about 6×1018cm-3 when the flow of PH3 is near 1.7sccm.Si multi-layer films with increased and decreased sequence of the flow of PH3 have also been grown respectively to investigate the special characteristics of PH3-doping silicon epitaxy.