CAJ | 학술논문

设计了一种永磁（钕铁硼）环形磁场装置代替常规电磁场用于直拉炉生长单晶硅和掺锗单晶硅（PMCZ法）．磁力线呈水平辐射状均匀分布．只要磁场强度足够强，即可有效地抑制熔体中热对流和晶体旋转产生的离心强迫对流，从而有效地抑制了固液界面处的温度波动，降低以至消除微观生长速率的起伏，造成了一种类似于空间微重力环境下生长晶体的条件．在这种条件下，杂质和掺杂剂的运动方式受扩散规律控制．利用这种装置生长了掺锗（Ge∶Si重量比为1.0%，5.0%和10.0%）和不掺锗的硅晶体，获得了氧浓度较低，掺杂剂径向分布均匀性好的较高质量的晶体．该装置磁场强度可方便地通过调节磁环之间相对位置及磁环相对固液界面位置进行调控，满足不同工艺条件对不同的场强的要求．
설계료일충영자（녀철붕）배형자장장치대체상규전자장용우직랍로생장단정규화참타단정규（PMCZ법）．자력선정수평복사상균균분포．지요자장강도족구강，즉가유효지억제용체중열대류화정체선전산생적리심강박대류，종이유효지억제료고액계면처적온도파동，강저이지소제미관생장속솔적기복，조성료일충유사우공간미중력배경하생장정체적조건．재저충조건하，잡질화참잡제적운동방식수확산규률공제．이용저충장치생장료참타（Ge∶Si중량비위1.0%，5.0%화10.0%）화불참타적규정체，획득료양농도교저，참잡제경향분포균균성호적교고질량적정체．해장치자장강도가방편지통과조절자배지간상대위치급자배상대고액계면위치진행조공，만족불동공예조건대불동적장강적요구．
A permanent magnetic field has been fabricated to replace the conventional electrical magnetic field,which is applied in a novel magnetic device for CZSi growth called PMCZ.Czochralski silicon(CZSi)and Ge-doped Si are grown in ring permanent magnetic fields.With magnetic line of force being a horizontal radialized distribution.Thermal convection in the melt and the centrifugal pumping flows due to the crystal rotation can be suppressed by the ring permanent field,effectively so can the temperature fluctuations and the microscopic growth-rate fluctuations at the solid-liquid interface．In magnetic fields,crystal growth is similar to that in the space of weightless impurity motion is diffusion-controlled.Crystal with lower oxygen concentration and the more homogeneous dopant in the radial direction was grown in such conditions.In this paper,Ge-doped concentration is 1.0%,5.0% and 10.0% respectively(Ge∶Si,weight ratio).The magnetic intensity can be adjusted by changing the location of the interface between magnetic device and melt-crystal or the positions between 2 or 3 magnetic rings,thus it can meet the needs of crystal growth comparing the electrical magnetic field and the permanent one,we find the later does not consume any electricity or water，but has more steady,magnetic field intensity,so that the crystal’s production cost can be reduced.