CAJ | 학술논문

利用同步辐射光电子能谱技术详细研究了Fe/GaAs(100)的界面反应和电子结构。在界面处，Fe与As形成稳定的化学键，而Ga则溶解到Fe薄膜中形成合金，但反应只能在界面处发生，形成窄的反应层。Fe沉积后改变了GaAs表面的电子结构，重新钉扎了费米能级位置，引起费米能级向价带顶移动0.27 eV。另外，Fe的生长模式在沉积过程中发生改变，而且存在As和Ga的扩散现象，同步辐射价带谱也证实了这一点。
이용동보복사광전자능보기술상세연구료Fe/GaAs(100)적계면반응화전자결구。재계면처，Fe여As형성은정적화학건，이Ga칙용해도Fe박막중형성합금，단반응지능재계면처발생，형성착적반응층。Fe침적후개변료GaAs표면적전자결구，중신정찰료비미능급위치，인기비미능급향개대정이동0.27 eV。령외，Fe적생장모식재침적과정중발생개변，이차존재As화Ga적확산현상，동보복사개대보야증실료저일점。
Interface reactions and the electronic structures at Fe/GaAs(100) interface were studied by synchrotron radiation photo-emission.We found that Ga diffuses into Fe film to form some kind of alloy and that Fe and As atoms form stable chemical bond.The reaction takes place only at the interface,resulting in the formation of a narrow interface layer.Fe deposition alters the surface electronic structures of GaAs,re-pinning the Fermi level,which shifts 0.27 eV downwards to the valence band.Fe growth mode varies in Fe deposition;diffusion of Ga and As was also observed. These observations were confirmed by the valence band spectra of synchrotron radiation photo-emission.