CAJ | 학술논문

选用Ba（C2H3O2）2、Sr（C2H3O2）2.1／2H2O和Ti（OC4H9）4为原材料，冰醋酸为催化剂，乙二醇乙醚为溶剂。用改进的溶胶-凝胶技术在Pt／Ti／SiO2／Si基片上成功地制备出钙钛矿型结构的（Ba1-xSrx）TiO3薄膜。该薄膜是制备铁电动态随机存取存储器、微波电容和非致冷红外焦平面阵列的优选材料；分析了薄膜的结构；测试了薄膜的介电和铁电性能。在室温10kHz下，（Ba0.73Sr0.27）TiO3薄膜介电系数和损耗分别为300和0.03。在室温1kHz下，（Ba0.95Sr0.05）TiO3薄膜剩余极化强度和矫顽场分别为3μC／cm2和50kV／cm。
선용Ba（C2H3O2）2、Sr（C2H3O2）2.1／2H2O화Ti（OC4H9）4위원재료，빙작산위최화제，을이순을미위용제。용개진적용효-응효기술재Pt／Ti／SiO2／Si기편상성공지제비출개태광형결구적（Ba1-xSrx）TiO3박막。해박막시제비철전동태수궤존취존저기、미파전용화비치랭홍외초평면진렬적우선재료；분석료박막적결구；측시료박막적개전화철전성능。재실온10kHz하，（Ba0.73Sr0.27）TiO3박막개전계수화손모분별위300화0.03。재실온1kHz하，（Ba0.95Sr0.05）TiO3박막잉여겁화강도화교완장분별위3μC／cm2화50kV／cm。
（Ba1-xSrx）TiO3（BST）ferroelectric thin films with perovskitestructure on Pt／Ti／SiO2／Si substrate have been prepared by improved Sol-Gel technique．Barium acetate，strontium acetate and tetrabutyl tianate are used raw materials．Glacial acetic acid is used as a catalyst．Ethylene glycol monoethyl ether is used as a solvent．（Ba1-xSrx）TiO3 thin films are excellent materials for preparing ferroelectric dynamic random access memory，microwave capacitors and uncooled infrared focal plane arrays．The dielectric and ferroelectric properties of （Ba1-xSrx）TiO3 thin films were measured．The εr and tan δ of（Ba0.73Sr0.27）TiO3 thin films are 300 and 0.03，respectively，at room temperature and 10 kHz The Pr and Ec of （Ba0.95Sr0.05）TiO3 thin films are 3 μC／cm2 and 50 kV／cm，respectively，at room temperature and 1 kHz.