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高能物理与核物理 고능물리여핵물리
HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS
2002年 9期 904-908 ,共5页

侯明东%张庆祥%刘杰%王志光%金运范%朱智勇%甄红楼%刘昌龙%陈晓曦%卫新国%张琳%樊友诚%祝周荣%张弋艇

후명동%장경상%류걸%왕지광%금운범%주지용%견홍루%류창룡%진효희%위신국%장림%번우성%축주영%장익정

单粒子翻转%单粒子闭锁%静态存储器單粒子翻轉%單粒子閉鎖%靜態存儲器
단입자번전%단입자폐쇄%정태존저기
single event upset%single event latchup%SRAM

研究了15.14MeV/u 136 Xe离子在不同批次的32k×8bits静态存储器中所引起的单粒子效应. 获得了单粒子翻转和单粒子闭锁截面与入射角度的依赖关系. 将单粒子效应截面与灵敏区中沉积的能量相联系,而不是线性能量转移(LET)值. 估计了灵敏体积的深度和死层的厚度.
연구료15.14MeV/u 136 Xe리자재불동비차적32k×8bits정태존저기중소인기적단입자효응. 획득료단입자번전화단입자폐쇄절면여입사각도적의뢰관계. 장단입자효응절면여령민구중침적적능량상련계,이불시선성능량전이(LET)치. 고계료령민체적적심도화사층적후도.
Single event effects induced by 15.14MeV/u 136 Xe ions in different batches of 32k×8 bits static random access memory are studied. The incident angle dependences of the cross sections for single event upset and single event latchup are presented. The SEE cross sections are plotted versus energy loss instead of linear energy transfer value in sensitive region. The depth of sensitive volume and thickness of "dead" layer above the sensitive volume are estimated.