半导体技术
半導體技術
반도체기술
SEMICONDUCTOR TECHNOLOGY
2010年
3期
228-232
,共5页
玻璃晶片%边缘磨削%崩边%光电器件%实验设计法
玻璃晶片%邊緣磨削%崩邊%光電器件%實驗設計法
파리정편%변연마삭%붕변%광전기건%실험설계법
glass wafer%edge grinding%edge breakage%photoelectron component%DOE method
在光电器件的制造过程中,用光学玻璃晶片作为电路制作的基板材料.玻璃晶片通过在大面积的玻璃面板上划圆获得.划圆后会形成非常锐利的边缘,需要将锐利边缘磨削成圆弧形,以减少在后续加工中产生破损、崩边.在光学玻璃晶片的边缘磨削中,合适的玻璃晶片边缘磨削参数对于晶片边缘磨削后的崩边情况、磨削斜面宽度、中心误差等均有很大影响.利用DOE试验方法,光学玻璃晶片边缘磨削过程中有效减小崩边,并给出了影响因素,获得并验证了最优化的磨削工艺参数,减少了晶片磨削后的崩边破损.
在光電器件的製造過程中,用光學玻璃晶片作為電路製作的基闆材料.玻璃晶片通過在大麵積的玻璃麵闆上劃圓穫得.劃圓後會形成非常銳利的邊緣,需要將銳利邊緣磨削成圓弧形,以減少在後續加工中產生破損、崩邊.在光學玻璃晶片的邊緣磨削中,閤適的玻璃晶片邊緣磨削參數對于晶片邊緣磨削後的崩邊情況、磨削斜麵寬度、中心誤差等均有很大影響.利用DOE試驗方法,光學玻璃晶片邊緣磨削過程中有效減小崩邊,併給齣瞭影響因素,穫得併驗證瞭最優化的磨削工藝參數,減少瞭晶片磨削後的崩邊破損.
재광전기건적제조과정중,용광학파리정편작위전로제작적기판재료.파리정편통과재대면적적파리면판상화원획득.화원후회형성비상예리적변연,수요장예리변연마삭성원호형,이감소재후속가공중산생파손、붕변.재광학파리정편적변연마삭중,합괄적파리정편변연마삭삼수대우정편변연마삭후적붕변정황、마삭사면관도、중심오차등균유흔대영향.이용DOE시험방법,광학파리정편변연마삭과정중유효감소붕변,병급출료영향인소,획득병험증료최우화적마삭공예삼수,감소료정편마삭후적붕변파손.
In the photoelectron component manufacturing process, optics glass wafer must be used. The optics glass wafer's process is similar to silicon wafer process. The glass wafer will be gained through cutting big area glass panel. But the shape edge will be formed. The shape edge must grinded into round to reduce breakage. During grinding optics glass wafer's edge. The appropriate grinding parameter has great influence on edge breakage of glass wafer. The parameters of optics glass wafer edge grinding include edge bevel width ace, the wafer center error and edge breakage etc. A kind of efficient method was introduced to reduce the edge break while grinding the optic glass wafer edge and present affect grinding factors. The edge breakage can be effectivly reduced with DOE method, and the best grinding parameters were gained.