CAJ | 학술논문

本文报道In掺杂ZnO纳米棒的成功制备和对其结构以及光荧光性能的详尽研究.在室温条件下ZnO的共振拉曼谱线容易受到很强的荧光干扰,甚至导致共振拉曼谱线完全被湮没.微量In掺杂入ZnO纳米棒中,调控紫外发光峰由378 nm(纯ZnO)红移至397 nm,另外,在制备过程中引入过量的氧,在样品中产生大量缺陷,降低了ZnO的紫外近带边发光峰强度.这两方面导致在窒温下可清楚的观察到In掺杂ZnO纳米棒的6阶LO拉曼峰.
본문보도In참잡ZnO납미봉적성공제비화대기결구이급광형광성능적상진연구.재실온조건하ZnO적공진랍만보선용역수도흔강적형광간우,심지도치공진랍만보선완전피인몰.미량In참잡입ZnO납미봉중,조공자외발광봉유378 nm(순ZnO)홍이지397 nm,령외,재제비과정중인입과량적양,재양품중산생대량결함,강저료ZnO적자외근대변발광봉강도.저량방면도치재질온하가청초적관찰도In참잡ZnO납미봉적6계LO랍만봉.
In this paper,the fabirication of In-doped ZnO nanorods and detailed investigations of their structures and photoluminescence properties were reported.Resonant Raman scattering spectrum is usually influenced by the strong photoluminescence at room temperature,and sometimes even invisible due to the strong near-band-edge luminescence(ultraviolet emission).The ultaviolet emission of In-doped ZnO nanorods red-shifts from 378nm(for undoped ZnO)to 397 nm due to a small amount of indium doped into ZnO.Also,the intensity of UV emission decreases because of the existence of large quantity of defects in In-doped ZnO nanorods.Both aspects mentioned above result in the appearance of 6 LO mode in the multiple-phonon resonant Raman spectrum of In-doped ZnO nanorods at room temperature.