纳米技术与精密工程
納米技術與精密工程
납미기술여정밀공정
NANOTECHNOLOGY AND PRECISION ENGINEERING
2012年
4期
318-321
,共4页
侯智昊%朱锋%郁元卫%朱健
侯智昊%硃鋒%鬱元衛%硃健
후지호%주봉%욱원위%주건
RF MEMS开关%串联接触式%毫米波
RF MEMS開關%串聯接觸式%毫米波
RF MEMS개관%천련접촉식%호미파
RF MEMS switch%DC-contact%millimeter wave
设计并制造了一种应用于毫米波波段的串联接触式RF MEMS开关.为了在毫米波波段获得较高的隔离度,在RF MEMS开关的输入、输出端口使用细长型的接触端,以降低输入、输出端口的耦合电容.为了获得较高的接触可靠性并降低开关的开启电压,RF MEMS开关上电极结构使用蟹形梁结构.该RF MEMS开关利用南京电子器件研究所微纳米研发部的金表面工艺制备.所获得的RF MEMS开关,在30 GHz频率下,其插入损耗为-0.3 dB,隔离度为-20 dB.在20~40 GHz的频率范围内,其插入损耗均优于-0.5 dB,隔离度均优于-20 dB.
設計併製造瞭一種應用于毫米波波段的串聯接觸式RF MEMS開關.為瞭在毫米波波段穫得較高的隔離度,在RF MEMS開關的輸入、輸齣耑口使用細長型的接觸耑,以降低輸入、輸齣耑口的耦閤電容.為瞭穫得較高的接觸可靠性併降低開關的開啟電壓,RF MEMS開關上電極結構使用蟹形樑結構.該RF MEMS開關利用南京電子器件研究所微納米研髮部的金錶麵工藝製備.所穫得的RF MEMS開關,在30 GHz頻率下,其插入損耗為-0.3 dB,隔離度為-20 dB.在20~40 GHz的頻率範圍內,其插入損耗均優于-0.5 dB,隔離度均優于-20 dB.
설계병제조료일충응용우호미파파단적천련접촉식RF MEMS개관.위료재호미파파단획득교고적격리도,재RF MEMS개관적수입、수출단구사용세장형적접촉단,이강저수입、수출단구적우합전용.위료획득교고적접촉가고성병강저개관적개계전압,RF MEMS개관상전겁결구사용해형량결구.해RF MEMS개관이용남경전자기건연구소미납미연발부적금표면공예제비.소획득적RF MEMS개관,재30 GHz빈솔하,기삽입손모위-0.3 dB,격리도위-20 dB.재20~40 GHz적빈솔범위내,기삽입손모균우우-0.5 dB,격리도균우우-20 dB.
A DC-contact series RF MEMS switch for millimeter-wave application was presented.To obtain high isolation in millimeter wave band,the in- and out-port of the switch was designed as long and thin shape which reduced the coupling capacitance between the in- and out-port.To obtain high contact stability and reduce pull-down voltage,an improved crab-shape structure was used as the bridge structure.The RF MEMS switch was fabricated with gold surface microfabrication process in the Nanjing Electronic Devices Institute.The measurement result showed that the insertion loss was -0.3 dB at 30 GHz,and the isolation was -20 dB at 30 GHz.In the range of 20-40 GHz,the insertion loss was better than -0.5 dB,and the isolation was better than -20 dB.