CAJ | 학술논문

对二氧化硅碳热还原氮化合成氮化硅的反应体系进行了热力学和动力学分析,主要研究了反应温度和氮气流量对Si_3N_4、Si_2N_2O和SiC生成的影响.热力学研究表明,Si_3N_4的生成需要足够高的温度(高于1800K)和充足的氮气气氛;Si_2N_2O的生成条件是较低的温度(低于1700K)和不充足的氮气气氛;SiC的生成条件是更高的温度(高于2000K)和不充足的氮气气氛.试验研究验证了热力学的分析,并确定了碳热还原氮化合成氮化硅的主要工艺条件(氮气流量为3L/min、煅烧温度为1500℃).在以上工艺条件下,可制备出纯的Si_3N_4粉体.
대이양화규탄열환원담화합성담화규적반응체계진행료열역학화동역학분석,주요연구료반응온도화담기류량대Si_3N_4、Si_2N_2O화SiC생성적영향.열역학연구표명,Si_3N_4적생성수요족구고적온도(고우1800K)화충족적담기기분;Si_2N_2O적생성조건시교저적온도(저우1700K)화불충족적담기기분;SiC적생성조건시경고적온도(고우2000K)화불충족적담기기분.시험연구험증료열역학적분석,병학정료탄열환원담화합성담화규적주요공예조건(담기류량위3L/min、단소온도위1500℃).재이상공예조건하,가제비출순적Si_3N_4분체.
The thermodynamics and kinetics of reaction system used in preparing silicon nitride powder by carbothermal reduction were analyzed. Effects of reaction temperature and nitrogen flow rate on the generation of Si_3N_4 , Si_2N_2O and SiC powders were investigated. It shows that the conditions of preparation are high enough temperature(>1800K) and adequate nitrogen for Si_3N_4, lower temperature(<1700K) and not enough nitrogen for Si_2N_2O,higher temperature(>2000K) and not enough nitrogen for SiC. The thermodynamic analysis is confirmed by the experimental research.The optimal technical parameters of Si_3N_4 powder preparation are nitrogen flow rate of 3L/min and reaction temperature 1500℃, at which pure Si_3N_4 powder can be obtained.