CAJ | 학술논문

采用磁控溅射法制备了Al-Sb多层薄膜,通过调节Al和Sb亚层厚度及层数改变原子配比,并在真空中退火.用X射线衍射(XRD)、扫描电子显微镜(SEM)、金相显微镜、Hall测试及俄歇电子能谱仪研究了薄膜的结构和性能.结果表明,刚沉积的薄膜只有Sb的结晶相,经500℃退火后化合为P型AlSb多晶薄膜,且沿(111)择优取向,退火温度超过600℃薄膜产生局部损伤.通过台阶仪显微摄像探头及俄歇深度剖图观察和分析了薄膜的潮解现象,提出了几种保护措施.
채용자공천사법제비료Al-Sb다층박막,통과조절Al화Sb아층후도급층수개변원자배비,병재진공중퇴화.용X사선연사(XRD)、소묘전자현미경(SEM)、금상현미경、Hall측시급아헐전자능보의연구료박막적결구화성능.결과표명,강침적적박막지유Sb적결정상,경500℃퇴화후화합위P형AlSb다정박막,차연(111)택우취향,퇴화온도초과600℃박막산생국부손상.통과태계의현미섭상탐두급아헐심도부도관찰화분석료박막적조해현상,제출료궤충보호조시.
The Al-Sb multi-layer films were prepared by magnetron sputtering method,and that samples of different atomic ratio were obtained through adjustment of Al and Sb sub-layer thickness and number,and then annealed in vaccum.The structural and electrical properties of the films before and after annealing have been studied with X-ray diffraction (XRD),X-ray fluorescence (XRF),scanning electron microscope (SEM),Metallogragh,Hall effect and Auger electron spectrometer.The results showed that only the Sb peaks were observed in as-deposited films.After annealing at 500℃,the P-type AlSb ploycrystalline films were obtaied by combination of Al and Sb elements,and with (111) preferred orientation.Also,the samples occurred partial damage in excess of 600℃ annealing.The deliquescence phenomenon of films was observed and analyzed with step profiler microcamera and auger depth profilling,and gives some methods to improve.