CAJ | 학술논문

随着SOI层厚度的变化,当SOI层的厚度为2μm时,SOI LDMOS器件具有一个最佳的击穿电压.如果漂移区纵向的杂质浓度为线性分布,那么它的纵向电场就会为一个常数,击穿电压会达到最大值,而这种杂质浓度线性分布的漂移区可以通过热扩散得到.采用这种方法制得的SOI LDMOS的纵向击穿电压提高了43%,导通电阻降低了24%,这是因为它的表面浓度更高.
수착SOI층후도적변화,당SOI층적후도위2μm시,SOI LDMOS기건구유일개최가적격천전압.여과표이구종향적잡질농도위선성분포,나요타적종향전장취회위일개상수,격천전압회체도최대치,이저충잡질농도선성분포적표이구가이통과열확산득도.채용저충방법제득적SOI LDMOS적종향격천전압제고료43%,도통전조강저료24%,저시인위타적표면농도경고.
As the thickness of an SOI layer varies, a minimum breakdown voltage is reached when the thickness is about 2μm. The vertical electric field of the SOI LDMOS with a drift region which is vertically linearly graded is constant. The vertically linearly graded concentration drift can be achieved by impurity implanting followed by thermal diffusion. In this way,the vertical breakdown voltage of SOI LDMOS with 2μm thickness SOI layer can be improved by 43%. The on-state resistance is lowered by 24% because of the higher impurity concentration of the SOI surface.