半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2001年
5期
636-640
,共5页
刘国利%王圩%汪孝杰%张佰君%陈娓兮%张静媛%朱洪亮
劉國利%王圩%汪孝傑%張佰君%陳娓兮%張靜媛%硃洪亮
류국리%왕우%왕효걸%장백군%진미혜%장정원%주홍량
DFB激光器%电吸收调制器%单片集成%光学镀膜%高速光传输
DFB激光器%電吸收調製器%單片集成%光學鍍膜%高速光傳輸
DFB격광기%전흡수조제기%단편집성%광학도막%고속광전수
采用端面有效反射率法,从理论上计算了单片集成电吸收调制DFB激光器(Electroabsorption Modulated DFB Laser,EML)的腔面反射率、耦合强度(κL)对其波长漂移的影响.同时在实验中通过改变腔面的反射率来验证计算结果.理论与实验的结果表明:为提高EML的模式稳定性,必须减小调制器一端的反射率,同时增加DFB激光器的κL.最终我们采用选择区域生长(Selective Area Growth,SAG)的方法,制作了低光反馈出光面的单脊条形EML,在2.5Gb/s的非归零(NRZ)码调制下,经过280km的标准光纤传输后,没有发现色散代价.
採用耑麵有效反射率法,從理論上計算瞭單片集成電吸收調製DFB激光器(Electroabsorption Modulated DFB Laser,EML)的腔麵反射率、耦閤彊度(κL)對其波長漂移的影響.同時在實驗中通過改變腔麵的反射率來驗證計算結果.理論與實驗的結果錶明:為提高EML的模式穩定性,必鬚減小調製器一耑的反射率,同時增加DFB激光器的κL.最終我們採用選擇區域生長(Selective Area Growth,SAG)的方法,製作瞭低光反饋齣光麵的單脊條形EML,在2.5Gb/s的非歸零(NRZ)碼調製下,經過280km的標準光纖傳輸後,沒有髮現色散代價.
채용단면유효반사솔법,종이론상계산료단편집성전흡수조제DFB격광기(Electroabsorption Modulated DFB Laser,EML)적강면반사솔、우합강도(κL)대기파장표이적영향.동시재실험중통과개변강면적반사솔래험증계산결과.이론여실험적결과표명:위제고EML적모식은정성,필수감소조제기일단적반사솔,동시증가DFB격광기적κL.최종아문채용선택구역생장(Selective Area Growth,SAG)적방법,제작료저광반궤출광면적단척조형EML,재2.5Gb/s적비귀령(NRZ)마조제하,경과280km적표준광섬전수후,몰유발현색산대개.
Effective facet reflectivity incorporating couple wave theory is adopted to calculate wavelength shift of electroabsorption modulated DFB laser (EML) with different facet reflectivity,facet phase and coupling strength,κL.Wavelength shift of index coupled EML is measured by optical spectrometer when the modulator side facet of the EML is coated with different reflectivity optical thin films.Theoretic and experimental results show that light feedback from the modulator output facet must be minimized and a relatively larger κL is needed to maintain the longitudinal mode stability.Single ridge waveguide EML incorporating InP window and anti-reflection optical film coating is fabricated by selective area growth.No power penalty is observed at a bit-error-ratio of 10-12 after standard single mode fiber transmission of 280km long when the EML is modulated with 2.5Gb/s NRZ 223-1 PRBS data.