CAJ | 학술논문

提出了一种解决大高宽比SU8结构的新方法.该方法是将SU8胶涂在一块掩模上,紫外光从掩模的背面照射,这样SU8胶的曝光将从底部开始,不需要进行过曝光来保证底部胶的曝光剂量,从而很容易控制曝光剂量和SU8胶结构的内应力.实验结果表明,该方法能够得到高宽比为32的SU8结构,而文献报道的SU8胶结构的高宽比最大仅为18.
제출료일충해결대고관비SU8결구적신방법.해방법시장SU8효도재일괴엄모상,자외광종엄모적배면조사,저양SU8효적폭광장종저부개시,불수요진행과폭광래보증저부효적폭광제량,종이흔용역공제폭광제량화SU8효결구적내응력.실험결과표명,해방법능구득도고관비위32적SU8결구,이문헌보도적SU8효결구적고관비최대부위18.
A new method is presented,which can obtain high aspect ratio in SU8 structures.Instead that the top of the photo resist layers are exposed to UV light through masks in conventional lithography,the new method utilizes a mask-back exposure technique,i.e.the SU8 resist layer coated on a mask surface (metal patterns on a glass plate),is irradiated by UV light through the back of the mask.So a desired exposure dose on the bottom of the resist layer can be easily achieved without over-exposing from its top.This has a two-fold effect,i.e.proper dose on the bottom of the resist and less internal stress.Initial experimental results show that compared to an aspect ratio of 18 obtained by conventional method,a higher aspect ratio of 32 in the SU8 structures can be achieved by this new method.