CAJ | 학술논문

采用微波电子回旋共振等离子体增强化学气相沉积(ECR-PECVD）技术在单晶衬底上制备了SiO2薄膜，研究了射频偏压对薄膜特性的影响。通过X射线光电子能谱(XPS)、傅里叶变换红外线光谱(FTIR)、原子力显微镜(AFM)和扫描隧道显微镜(STM)三维形貌图测量等手段，对成膜特性进行了分析。实验结果表明，通过改变射频偏压的参数来控制离子轰击能量，对ECR-PECVD成膜的内应力、溅射现象、微观结构和化学计量均有明显的影响。
채용미파전자회선공진등리자체증강화학기상침적(ECR-PECVD）기술재단정츤저상제비료SiO2박막，연구료사빈편압대박막특성적영향。통과X사선광전자능보(XPS)、부리협변환홍외선광보(FTIR)、원자력현미경(AFM)화소묘수도현미경(STM)삼유형모도측량등수단，대성막특성진행료분석。실험결과표명，통과개변사빈편압적삼수래공제리자굉격능량，대ECR-PECVD성막적내응력、천사현상、미관결구화화학계량균유명현적영향。
Microwave electron cyclotron resonance plasma enhanced chemical vapor deposition was used to prepare silicon dioxide films on crystalline silicon substrate．The effects of RF bias on the properties of SiO2 film have been studied．X-ray photoelectron spectroscopy，Fourier transforms infrared spectroscopy，atomic force microscopy and three-dimensional space morphology picture of scanning tunneling microscope were used to investigate the characterization of deposited films．Experimental results show that the stress，the sputtering，the microstructure，and the stoichiometry of the films are greatly influenced through changing the parameters of RF substrate bias to control ion bombardment energy．