Growth and optical characteristics of ZnCdSe/ZnSe QWs on Si substrate with ZnO buffer
  • 万方数据
    中国光学快报(英文版) 중국광학쾌보(영문판)
    CHINESE JOURNAL OF LASERS
    2003年 11期 668-670 ,共3页

    王晓华%范希武%单崇新%张吉英%张振中%吕有明%刘益春%贾中元%钟景昌%申德振

    왕효화%범희무%단숭신%장길영%장진중%려유명%류익춘%가중원%종경창%신덕진





    In this paper, the growth and characteristics of ZnCdSe/ZnSe quantum wells (QWs) prepared on ZnOSi (111) templates are reported. An oriented ZnO thin film with a smooth surface was employed to be the buffer layer for the ZnCdSe/ZnSe QWs growth. Scanning electron microscopy (SEM) patterns showed that the ZnO buffer layer improved the smoothness of the ZnCdSe/ZnSe sample. Up to the 3rd longitudinal optical phonon of Zn0.56Cd0.44Se observed in Raman spectra suggests that the crystal quality of ZnCdSe/ZnSe QWs is reasonably good. The influence of quantum confinement effect on exciton characters of the QWs was also demonstrated.
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