CAJ | 학술논문

以CH3CH2OH为溶剂,CuCl和InCl3为反应物,H2S为硫源,用离子层气相反应法制备了CuInS2半导体薄膜.用X射线衍射、X射线光电子谱、扫描电镜和紫外-可见光谱等对薄膜的晶型、表面化学组成、表面形貌及光电性能进行了表征.分析了混合前驱体溶液中阳离子浓度比[Cu]/[In]对薄膜化学计量及性能的影响.[Cu]/[In]≥1.25时,可获得黄铜矿结构的CuInS2薄膜,其单相形成区外[Cu]/[In]为1.45～1.65.
이CH3CH2OH위용제,CuCl화InCl3위반응물,H2S위류원,용리자층기상반응법제비료CuInS2반도체박막.용X사선연사、X사선광전자보、소묘전경화자외-가견광보등대박막적정형、표면화학조성、표면형모급광전성능진행료표정.분석료혼합전구체용액중양리자농도비[Cu]/[In]대박막화학계량급성능적영향.[Cu]/[In]≥1.25시,가획득황동광결구적CuInS2박막,기단상형성구외[Cu]/[In]위1.45～1.65.
The CuInS2 thin films were prepared by ion layer gas reaction using C2H5OH as a solvent, CuCl and InCl3 as reagents and H2S gas as sulfuration source. The structural, chemical, topographical development and the photoelectric properties of thin films were investigated by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and ultraviolet-visible spectroscopy. The effects of precursor solution on the stoichiometry of CuInS2 films were investigated. The results show that CuInS2 film with the complete chalcopyrite structure is obtained at [Cu]/[In] ≥ 1.25, and near stoichimetric CuInS2 without any segregation phases is obtained in the range of 1.45-1.65.