电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2010年
3期
8-11
,共4页
郑兴华%刘馨%汤德平%刘旭俐%郑可炉
鄭興華%劉馨%湯德平%劉旭俐%鄭可爐
정흥화%류형%탕덕평%류욱리%정가로
CaCu_3Ti_4O_(12)%BiFeO_3%巨介电常数%固相反应法
CaCu_3Ti_4O_(12)%BiFeO_3%巨介電常數%固相反應法
CaCu_3Ti_4O_(12)%BiFeO_3%거개전상수%고상반응법
CaCu_3Ti_4O_(12)%BiFeO_3%giant permittivity%solid state reaction method
采用固相反应法制备了BiFeO_3掺杂的CaCu_3Ti_4O_(12)(CCTO)陶瓷,研究了BiFeO_3掺杂量对CCTO陶瓷的烧结性能、晶体结构和介电性能的影响.结果表明,BiFeO_3掺杂改善了CCTO陶瓷的烧结性能.随BiFeO_3掺杂量的增加,CCTO陶瓷的晶格常数和ε_r均先增大而后减小;而tanδ先几乎不变而后增大.当x(BiFeO_3)为0.5%, 1 040 ℃烧结的CCTO陶瓷样品在1 kHz时具有巨介电常数(ε_r = 14 559)和较低的介质损耗(tanδ = 0.12).
採用固相反應法製備瞭BiFeO_3摻雜的CaCu_3Ti_4O_(12)(CCTO)陶瓷,研究瞭BiFeO_3摻雜量對CCTO陶瓷的燒結性能、晶體結構和介電性能的影響.結果錶明,BiFeO_3摻雜改善瞭CCTO陶瓷的燒結性能.隨BiFeO_3摻雜量的增加,CCTO陶瓷的晶格常數和ε_r均先增大而後減小;而tanδ先幾乎不變而後增大.噹x(BiFeO_3)為0.5%, 1 040 ℃燒結的CCTO陶瓷樣品在1 kHz時具有巨介電常數(ε_r = 14 559)和較低的介質損耗(tanδ = 0.12).
채용고상반응법제비료BiFeO_3참잡적CaCu_3Ti_4O_(12)(CCTO)도자,연구료BiFeO_3참잡량대CCTO도자적소결성능、정체결구화개전성능적영향.결과표명,BiFeO_3참잡개선료CCTO도자적소결성능.수BiFeO_3참잡량적증가,CCTO도자적정격상수화ε_r균선증대이후감소;이tanδ선궤호불변이후증대.당x(BiFeO_3)위0.5%, 1 040 ℃소결적CCTO도자양품재1 kHz시구유거개전상수(ε_r = 14 559)화교저적개질손모(tanδ = 0.12).
BiFeO_3 doped CaCu_3Ti_4O_(12) (CCTO) ceramics were prepared using the solid state reaction method. The effects of BiFeO_3 doping amount on the sintering characteristic, crystal structure and dielectric properties of CCTO ceramics were investigated. The results show that the sintering characteristic of CCTO ceramics is improved by BiFeO_3 doping. With the increase of BiFeO_3 doping amount, the lattice constants and relative permittivity of CCTO ceramics increase at first, then gradually decrease. However, dielectric loss changes little first, and then increases while the BiFeO_3 doping amount increases. With the 0.5% (mole fraction) BiFeO_3 doping, the CCTO ceramic sample sintered at 1 040 ℃ possesses giant permittivity (ε_r = 14 559) and low dielectric loss (tanδ = 0.12) at 1 kHz.