CAJ | 학술논문

利用正切平方势把电子的Schr(o)dinger方程化为了超几何方程,并用超几何函数严格求解了电子的本征值和本征函数利用量子力学中的密度矩阵算符理论导出了正切平方势阱中的线性与三阶非线性光学折射率的解析表达式计算了该系统中的线性与非线性光学折射率变化的大小,讨论了影响折射率变化因素文章以典型的GaAs/AlGaAs势阱为例作了数值计算,数值计算结果表明,势阱的形状和入射光强对光学折射率的变化有着重要的影响.
이용정절평방세파전자적Schr(o)dinger방정화위료초궤하방정,병용초궤하함수엄격구해료전자적본정치화본정함수이용양자역학중적밀도구진산부이론도출료정절평방세정중적선성여삼계비선성광학절사솔적해석표체식계산료해계통중적선성여비선성광학절사솔변화적대소,토론료영향절사솔변화인소문장이전형적GaAs/AlGaAs세정위례작료수치계산,수치계산결과표명,세정적형상화입사광강대광학절사솔적변화유착중요적영향.
In the frame of quantum mechanics, the equation to describe the particle motion in Tan2x quantum well is reduced to the hypergeometric equation. The eigenvalue and the eigefunction are obtained by solving the Schr(o)dinger equation. Analytical expressions of linear and the third-order nonlinear optical refractive index changes are obtained in Tan2x quantum well using the density matrix formalism taking into account the intrasubband relaxation. The linear and the third-order nonlinear refractive index changes are calculated. The results show that the refractive index changes depend on the shape of the well, the tunnel bandwith and the optical intensity. Numerical results are presented for a typical GaAs/AlGaAs Tan2x quantum well.